IRF7453 ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93899AIRF7453SMPS MOSFET®HEXFET Power MOSFET
IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7453PbFSMPS MOSFETHEXFET Power MOSFET
IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters250V 0.23@V = 10V 2.2A GS Lead ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93842BIRF7455SMPS MOSFET®HEXFET Power MOSFET
ISL29003IROZ , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
ISL29003IROZ-T7 , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
ISL29018IROZ-T7 , Digital Ambient Light Sensor and Proximity Sensor with Interrupt Function
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
ISL29028AIROZ-T7 , Low Power Ambient Light and Proximity Sensor with Intelligent Interrupt and Sleep Modes
IRF7453
250V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93899A
International
. . IRF7453
Tart, Rectifier SMPS MOSFET
HEXFET© Power MOSFET
Applications Voss RDS(on) max ID
o High frequency DC-DC converters
250V 0.23Q@VGS = 10V 2.2A
Benefits
o Low Gate to Drain Charge to Reduce 1 8
Switching Losses s CI L D
0 Fully Characterized Capacitance Including s D12 H 7m: D
. . . . K
Effective Coss to Simplify Design (See s 3:3 l am: D
App. Note AN1001) 4 5
o Fully Characterized Avalanche Voltage G DI DE D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.7 A
G, Pulsed Drain Current C) 17
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
2/1/01
IRF7453
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.33 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.23 Q VGS = 10V, ID = 1.3A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = MOV, VGS = 0V
- - 250 Vros = 200V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 24V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -24V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 1.8 - - S VDs = 50V, ID = 1.3A
Qg Total Gate Charge - 25 38 ID = 1.3A
Qgs Gate-to-Source Charge - 6.0 9.0 nC Vos = 200V
di Gate-to-Drain ("Miller") Charge - 11 17 VGS = 10V,
td(on) Turn-On Delay Time - 9.0 - VDD = 125V
tr Rise Time - 2.5 - ns ID = 1.3A
tam) Turn-Off Delay Time - 19 - Rs = 6.on
tr Fall Time - 20 - I/cs = 10V ©
Ciss Input Capacitance - 930 - VGs = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 23 - pF f = 1.0MHz
Coss Output Capacitance - 1050 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 52 - VGs = 0V, VDs = 200V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 96 - VGs = 0V, Vos = 0V to 200V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche Current© - 2.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - 17 integral reverse G
(Body Diode) co p-n junction diode. s
I/sn Diode Forward Voltage - - 1.3 V To = 25°C, Is = 1.3A, VGs = 0V ©
trr Reverse Recovery Time - 98 150 ns To = 25°C, IF = 1.3A
Qrr Reverse RecoveryCharge - 340 510 nC di/dt = 100A/ps co
2
