IRF7452TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Voss RDS(on) max ID
. High frequency DC-DC 100V 0.060Q 4.5A
Benefits
. Low Gate ..
IRF7453 ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93899AIRF7453SMPS MOSFET®HEXFET Power MOSFET
IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7453PbFSMPS MOSFETHEXFET Power MOSFET
IRF7453TRPBF ,250V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters250V 0.23@V = 10V 2.2A GS Lead ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
IRF7455 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High Frequency DC-DC Converters 30V 0.0075Ω 15A with Synchr ..
ISL29001IROZ-T7 , Light-to-Digital Sensor
ISL29003IROZ , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
ISL29003IROZ-T7 , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
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ISL29023IROZ-T7 , Integrated Digital Ambient Light Sensor with Interrupt Function
IRF7452TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRliUctifier
PD- 95731
IRF7452PbF
SMPS MOSFET
HEXFET@ Power MOSFET
Applications V R max I
0 High frequency DC-DC converters Q,',','' "ers,' a'),',
. Lead-Free
Benefits
0 Low Gate to Drain Charge to Reduce
Switching Losses
. Fully Characterized Capacitance Including
Effective Cogs to Simplify Design, (See
App. Note AN1001)
'SIEID
atao fttiitr
61130 ‘f
0 Fully Characterized Avalanche Voltage I” L)
and Current Top View SO-il
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vos @10V 4 5
ID @ TA = 70°C Continuous Drain Current, Vos @10V 3.6 A
IDM Pulsed Drain Current C) 36
PD @TA = 25°C Power Dissipation 2 5 W
Linear Derating Factor 0 02 Wl°C
Vos Gate-to-Source Voltage t 30 V
Ov/dt Peak Diode Recovery de/Ot © 3_5 V/ns
Tu Operating Junction and -55 to + 150
Tsro Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1 6mm from case )
Typical SNIPS Topologies
0 Telecom 48V in put DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes co through © are on page 8
1
8/11/04
IRF7452PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Veg = ov, ID = 250pA
AV(BR)DSSJATJ Breakdown Voltage Temp. CoetMient - 0.11 - 1/f'C Reference to 25''C, ID = 1mA ©
Roam) Static Drain-to-Source On-Resistance - - 0.060 n I/cs = 10V, ID = 2.7A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Mos = Vos, ID = 250pA
bss Drain-to-Source Leakage Current - - 25 PA Vos = 100V, Ws = 0V
- - 250 I/ce = 80V, Vss = ov, Tu = 150°C
l Gate-to-Source Forward Leakage - - 100 n A Veg = 24V
GSS Gate-to-Source Reverse Leakage - - -100 Veg = -24V
Dynamic @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 3.4 - - S I/ce = 50V, ID = 2.7A
Qg Total Gate Charge - 33 50 ID = 2.7A
Qgs Gate-to-Source Charge - 7.3 11 n0 Ws = 80V
di Gate-to-Drain ("Miller") Charge - 16 24 l/ss = 10V, 6)
tmgn) Turn-On Delay Time - 9.5 - Vcc = 50V
tr Rise Time - 11 - ns ID = 2.7A
td(off) Turn-Off Delay Time - 16 - Rs = 6.09
tf Fall Time - 13 - Ws =10V ©
C.SS Input Capacitance - 930 - Veg = 0V
Coss Output Capacitance - 300 - VDS = 25V
Crss Reverse Transfer Capacitance - 84 - pF f = 1.0MHz
Coss Output Capacitance - 1370 - Veg = OV, I/os = 1.0V, I = 1.0MHz
Coss Output Capacitance - 170 - Veg = ov, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - Ws = ov, Vros = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy® - 200 md
IAR Avalanche Current© - 4.5 A
EAR Repetitive Avalanche Energy© - 0.25 mJ
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient© - 50 ''CAN
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 6
(Body Diode) C) - - 36 p-n junction diode. s
l/sc, Diode Forward Voltage - - 1.3 V Tu = 25''C, Is = 2.7A, l/ss = 0V ©
t, Reverse Recovery Time - 77 120 ns Tu = 25''C, IF = 2.7A
er Reverse RecoveryCharge - 270 410 nC di/dt = 100A/us C4)
2
