IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93893AIRF7450SMPS MOSFET®HEXFET Power MOSFET
IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω Ω Ω Ω Ω@V = 10V 2.5AGS ..
IRF7450 ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω Ω Ω Ω Ω@V = 10V 2.5AGS ..
IRF7450PBF , SMPS MOSFET HEXFET Power MOSFET
IRF7450TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17@V = 10V 2.5AGS Lead-F ..
IRF7451 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93898AIRF7451SMPS MOSFET®HEXFET Power MOSFET
ISL28291FBZ , Single and Dual Single Supply Ultra-Low Noise, Low Distortion Rail-to-Rail Output, Op Amp
ISL28474FAZ , Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifier and Precision Operational Amplifier
ISL28474FAZ , Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifier and Precision Operational Amplifier
ISL29000IROZ-T7 , Ambient Light Photo Detect IC
ISL29001IROZ-T7 , Light-to-Digital Sensor
ISL29003IROZ , Light-to-Digital Output Sensor with High Sensitivity, Gain Selection, Interrupt Function and I2C Interface
IRF7450
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93893A
International
. . IRF7450
TOR Rectifier SMPS MOSFET
HEXFET© Power MOSFET
Applications Voss Rtos(on) max ID
o High frequency DC-DC converters
200V 0.17Q@VGs = 10V 2.5A
Benefits
. Low Gate to Drain Charge to Reduce 1 8
Switching Losses s W _ D
. Fully Characterized Capacitance Including s 3:2 H 7m: o
. . . . K
Effective Coss to Simplify Design (See s DI: IL, am D
App. Note AN1001) -,-4 5 -
o Fully Characterized Avalanche Voltage G ELL LED D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.0 A
G, Pulsed Drain Current C) 20
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 11 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
1
2/22/01
IRF7450
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - 0.26 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 0.17 Q VGS = 10V, ID = 1.5A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, VGS = 0V
- - 250 Vros = 160V, VGs = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 2.6 - - S Vos = 50V, ID = 1.5A
Qg Total Gate Charge - 26 39 ID = 1.5A
Qgs Gate-to-Source Charge - 6.0 9.0 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 12 18 VGS = 10V,
td(on) Turn-On Delay Time - 10 - VDD = 100V
tr Rise Time - 3.0 - ns ID = 1.5A
tam) Turn-Off Delay Time - 17 - Rs = 6.on
tr Fall Time - 18 - VGs = 10V ©
Ciss Input Capacitance - 940 - VGS = 0V
Coss Output Capacitance - 160 - Vos = 25V
Crss Reverse Transfer Capacitance - 33 - pF f = 1.0MHz
Coss Output Capacitance - 1100 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 66 - VGs = 0V, VDs = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 25 - VGs = 0V, Vos = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 230 mJ
IAR Avalanche Current0) - 2.5 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - 20 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 1.5A, VGs = 0V ©
trr Reverse Recovery Time - 97 146 ns To = 25°C, IF = 1.5A
Qrr Reverse RecoveryCharge - 350 525 nC di/dt = 100A/ps ©
2
