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IRF7425TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
IRF7/4'25PbF
Vos -20 v
RDSion) max 8.2
(@sz = -4.5V) m9
RDSion) max 13
(@VGs = -2.5V)
A, (typical) 87 nC
k, -15 A
(@TA = 25°C)
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer qualification
HEXFET© Power MOSFET
srrm-l ”EDD
SIIDZ 7 D
3 E F:
5:11: W0
GEIII4 SEED
TopView SO-8
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type Standard Pack . Orderable Part Number
Form Quantity
Tube/Bulk 95 IRF7425PbF
IRF7425PbF SO-8
Tape and Reel 4000 IRF7425TRPbF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -15
ID @ TA-- 70°C Continuous Drain Current, Vas @ -4.5V -12 A
bs, Pulsed Drain Current (D -60
Pro @TA = 25°C Power Dissipation G) 2.5 W
Pro @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Ves Gate-to-Source Voltage 1 12 V
To, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient© 50 °C/W
fl © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
|RF7425PbF
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.010 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance _- _- ')f mg 2: : Ci'),' t : f/t g
Vesah) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250pA
gfs Forward Transconductance 44 - - S Vos = -1OV, ID = -15A
loss Drain-to-Source Leakage Current - - -1.0 PA 1hos = -16V, VGS = 0V
- - -25 Ihos = -16V, l/ss = 0V, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A l/ss = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
09 Total Gate Charge - 87 130 ID = -15A
Qgs Gate-to-Source Charge - 18 27 nC VDs = -10V
di Gate-to-Drain ("Miller") Charge - 21 32 Vas = -4.5V
tdmn) Turn-On Delay Time - 13 - VDD = -10V ©
tr Rise Time - 2O - ns ID = -1.0A
td(off) Turn-Off Delay Time - 230 - Re = 6.on
if Fall Time - 160 - Vas = -4.5V
Ciss Input Capacitance - 7980 - Vas = 0V
COSS Output Capacitance - 1480 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 980 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ --- -2.5 A showing the
ISM Pulsed Source Current _ _ -60 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage __- __- -1.2 V To = 25°C, Is = -2.5A, Vss = 0V ©
tn Reverse Recovery Time --- 120 180 ns To = 25°C, IF = -2.5A
Q" Reverse Recovery Charge - 160 240 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle g 2%.
(3) Surface mounted on 1 in square Cu board, ts 10sec.
© 2013 International Rectifier
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October 29, 2013
