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IRF7425
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 94022A
IRF7425
HEXFET0 Power MOSFET
International
TOR Rectifier
0 Ultra Low On-Resistance VDss RDS‘on, max (mn) ID
0 P-Channel MOSFET 20V 8 2@Vss = -4 5V -15A
0 Surface Mount . - .
o Available in Tape & Reel 13@VGS - -2.5V -13A
Description s m1 In, D
These P-Channel HEXFET® Power MOSFETs from D312 7 D
International Rectifier utilize advanced processing s H, CED
techniques to achieve the extremelyIowon-resistance s m3 L l, D
per silicon area. This benefit provides the designer 4
with an extremely efficient device for use in battery G E133 In,, D
and load management applications..
Top View SO-8
The SO-8 has been modfed through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. 1/Nflththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -20 V
ID @ TA = 25''C Continuous Drain Current, Ves @ -4.5V -15
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -12 A
IDM Pulsed Drain Current co -60
Po @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 ''C/W
1
1 1/20/01
IRF7425 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.010 - V/°C Reference to 25''C, ID = -1mA
. . . - - 8.2 Was = -4.5V, ID = -15A ©
R Static Drain-to-Source On-Resistance
DS(on) - - 13 mn VGS = -2.5V, ID = -13A ©
VGSM Gate Threshold Voltage -0.45 - -1.2 V Vos = l/cs, ID = -250pA
gfs Forward Transconductance 44 - - S Vos = -10V, ID = -15A
loss Drain-to-Source Leakage Current - - -1.0 HA Vros = -16V, VGS = 0V
- - -25 Ws = -16V, Vss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A I/ss = -12V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 87 130 ID = -15A
ths Gate-to-Source Charge - 18 27 nC Vros = -10V
di Gate-to-Drain ("Miller") Charge - 21 32 l/ss = -4.5V
tdmn) Turn-On Delay Time - 13 - VDD = -10V ©
tr Rise Time - 20 - ns ID = -1.0A
tam) Turn-Off Delay Time - 230 - Rs = 6.09
tt Fall Time - 160 - VGS = -4.5V
Ciss Input Capacitance - 7980 - VGs = 0V
Cass Output Capacitance - 1480 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 980 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current - 6 0 integral reverse G
(Body Diode) co - - p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, N/ss = 0V ©
tn Reverse Recovery Time - 120 180 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 160 240 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by Cs) Surface mounted on 1 in square Cu board, ts 10sec.
max. junction temperature.
© Pulse width 3 400ps; duty cycle f 2%.
2
