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IRF7422D2-IRF7422D2TR
-20V FETKY
International
:rartRectifier
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifer's low forward drop Schottky rectihers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
PD-91412M
IRF7422D2
FETKYTM MOSFET & Schottky Diode
VDSS = -20V
RDS(on) = 0.099
Schottky Vf = 0.52V
Parameter Maximum Units
Ite: :32 Continuous Drain Current, VGs @ -4.5V li' A
IDM Pulsed Drain Current (D -33
:3 3:2; :30: Power Dissipation :2 W
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage 1 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance Ratings
Parameter Maximum Units
ROJA l Junction-to-Ambient ED 62.5 °C/W
Notes:
co Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
C) la, I -2.2A, di/dt S -50A/ps, VDD I V(BR)DSS, TJ S 150°C
© Pulse width s: 300ps - duty cycle s: 2%
co Surface mounted on FR-4 board, ts 10sec.
10/18/04
IRF7422D2
International
TOR Rectifier
MOSFET Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
RDSM) Static Drain-to-Source On-Resistance - 0.07 0.09 Q VGS = -4.5V, ID = -2.2A ©
- 0.115 0.14 VGs=-2.7V,lD=-1.8A©
VGS(th) Gate Threshold Voltage -0.70 - - V Vos = VGs, ID = -250pA
Ts Forward Transconductance 4.0 - - S Vos = -16V, ID = -2.2A
bss Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, VGS = 0V
- - -25 V93 = -16V, N/ss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 15 22 ID = -2.2A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 6.0 9.0 Ves = -4.5V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 8.4 - VDD = -10V
tr Rise Time - 26 - ns ID = -2.2A
td(ott) Turn-Off Delay Time - 51 - Rs = 6.09
If Fall Time - 33 - RD = 4.59, See Fig. 10 ©
Ciss Input Capacitance - 610 - VGS = 0V
Cass Output Capacitance - 310 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current(Body Diode) - - -2.5
ISM Pulsed Source Current (Body Diode) - - -17 A
VSD Body Diode Forward Voltage - - -1.0 V TJ = 25°C, ls = -1.8A, VGS = 0V
tn Reverse Recovery Time (Body Diode) - 56 84 ns TJ = 25°C, IF = -2.2A
G, Reverse RecoveryCharge - 71 110 nC di/dt = -100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 A 50% Duty Cycle. Rectangular Wave, Tc = 25°C
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or 3ps Rect. pulse Following any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward voltage drop 0.57 If = 3.0, T] = 25°C
0.77 V lf = 6.0, T] = 25°C
0.52 If = 3.0, T] = 125°C
0.79 If = 6.0, Tj = 125°C
Irm Max. Reverse Leakage current 0.13 m A Vr = 20V Tj = 25°C
18 T] = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/ps Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
