IRF7416TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7416TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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SO-8
Absolute Maximum Ratings
ParameterMax.UnitsID @ TA = 25°CContinuous Drain Current, VGS @ -10V-10
ID @ TA = 70°CContinuous Drain Current, VGS @ -10V-7.1
IDMPulsed Drain Current -45
PD @TA = 25°C Power Dissipation2.5
Linear Derating Factor0.02W/°C
VGSGate-to-Source Voltage ± 20V
EASSingle Pulse Avalanche Energy370mJ
dv/dtPeak Diode Recovery dv/dt -5.0V/ns
TJ Operating Junction and
TSTGStorage Temperature Range
Thermal Resistance
ParameterMax.UnitsRθJA Junction-to-Ambient 50°C/W-55 to + 150
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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ParameterMin.Typ.Max.UnitsV(BR)DSSDrain-to-Source Breakdown Voltage-30––––––V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient–––-0.024–––V/°C
VGS(th)Gate Threshold Voltage-1.0–––-2.04V
gfsForward Transconductance5.6––––––S
IDSSDrain-to-Source Leakage Current––––––-1.0
IGSSGate-to-Source Forward Leakage––––––-100
Gate-to-Source Reverse Leakage––––––100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ParameterMin.Typ.Max.UnitsTotal Gate Charge–––6192
QgsGate-to-Source Charge–––8.012
QgdGate-to-Drain ("Miller") Charge–––2232
td(on)Turn-On Delay Time–––18–––Rise Time–––49–––
td(off)Turn-Off Delay Time–––59–––Fall Time–––60–––
CissInput Capacitance–––1700–––
CossOutput Capacitance–––890–––
CrssReverse Transfer Capacitance–––410–––
Diode Characteristics
ParameterMin.Typ.Max.UnitsContinuous Source Current
(Body Diode)
ISMPulsed Source Current
(Body Diode)
VSDDiode Forward Voltage––––––-1.0V
trrReverse Recovery Time–––5685nsTJ = 25°C,IF = -5.6A
QrrReverse Recovery Charge–––99150nCdi/dt = 100A/μs
VDS = VGS, ID = -250μA
ConditionsVDS = -10V, ID = -2.8A
ID = -5.6A
VGS = -20V
RDS(on)Static Drain-to-Source On-ResistanceΩVGS = -4.5V, ID = -2.8A
ConditionsVGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -5.6A
TJ = 25°C, IS = -5.6A, VGS = 0V
integral reverse
p-n junction diode.
ConditionsMOSFET symbol
showing theA
VDS = -25V
ƒ = 1.0MHz, See Fig. 5VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -10V, See Fig. 6 & 9
VGS = 20V
VDS = -24V
VDD = -15V
ID = -5.6A
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
-3.1
3
20μs PULSE WIDTH�
T = 25°CA
-I , D
t (A
-V , Drain-to-Source Voltage (V)
-3.0V
VGS�
TOP - 15V - 10V - 7.0V
- 5.5V - 4.5V
- 4.0V - 3.5V
BOTTOM - 3.0V-I , D
t (A
-V , Drain-to-Source Voltage (V)
-3.0V
VGS� TOP - 15V
- 10V - 7.0V
- 5.5V - 4.5V - 4.0V
- 3.5V BOTTOM - 3.0V 20μs PULSE WIDTH�
T = 150°CJ
T = 25°C
T = 150°C
-I
,
Dra
rre
(A)
-V , Gate-to-Source Voltage (V)
V = -10V
20μs PULSE WIDTH�
-60-40-20020406080100120140160T , Junction Temperature (°C)
, D
liz
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�I = -5.6AD
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V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
iss gs gd ds
rss gd
oss ds gdissossrss20406080100
, G
-to
lta
(V
Q , Total Gate Charge (nC)
�V = -24V
V = -15V
FOR TEST CIRCUIT�
SEE FIGURE 9
I = -5.6AD
T = 25°C
T = 150°C
V = 0V�GS
-V , Source-to-Drain Voltage (V)
-I
, R
rre
t (A
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITEDBY RDS(on)
Single Pulse
= 150 C
= 25 C°J
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
100us
1ms
10ms
5
10
100
0.00010.0010.010.1 1 10 100
Notes:
1. Duty factor D =t / t
2. Peak T=Px Z+ T2DMthJAA
t , Rectangular Pulse Duration (sec)
Thermal
pons
(Z )
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Starting T , Junction Temperature ( C)
E ,
Si
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TOP
BOTTOM
-2.5A
-4.5A
-5.6A
