IRF7413ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7413ZPbFHEXFET Power MOSFET
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IRF7416TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7413ZTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95335D
IRF7413ZDbF
HEXFET© Power MOSFET
International
TOR Rectifier
Applications
q Control FET for Notebook Processor Voss Rros(on) max ID
Power 30V 10mO@Vas = 10V 13A
0 Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems s E1 ' B D
s E11212 H 7:111 D
3 W r 6
Benefits S m m D
o Ultra-Low Gate Impedance G m4 5m D
0 Very Low RDS(on) Top View SO-8
q Fully Characterized Avalanche Voltage
and Current
0 100% Tested for Rs
q Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Veg @ 10V 13
ID © TA = 70°C Continuous Drain Current, VGS @ 10V 10 A
IDM Pulsed Drain Current CO 100
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead --- 20 °CAN
ROJA Junction-to-Ambient © _ 50
Notes (D through (D are on page 10
05/08/08
IRF7413ZPbF
International
TOR Rectifier
Static © T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 --- - V l/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 8.0 10 mg Vss = 10V, ID = 13A ©
- 10.5 13 I/as = 4.5V, ID = 10A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V Vos = Vas, ID = 25pA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, VGS = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - -- -100 Vss = -20V
gfs Forward Transconductance 62 -- -- S l/rss = 15V, ID = 10A
q, Total Gate Charge - 9.5 14
0951 Pre-Vth Gate-to-Source Charge - 3.0 - Vos = 15V
Ass Post-Vth Gate-to-Source Charge - 1.0 - nC Vas = 4.5V
di Gate-to-Drain Charge - 3.0 - ID = 10A
ngdr Gate Charge Overdrive - 2.5 - See Fig. 16
st Switch Charge (ass + the) - 4.0 -
Qoss Output Charge - 5.6 - nC Vos = 15V, l/ss = 0V
Rs Gate Resistance -- 2.3 4.5 Q
tum) Turn-On Delay Time - 8.7 - VDD = 16V, Vas = 4.5V
t, Rise Time - 6.3 - ID =1OA
td(off) Turn-Off Delay Time -- 11 -- ns Clamped Inductive Load
t, Fall Time -- 3.8 --
Ciss Input Capacitance - 1210 -- Vss = 0V
Coss Output Capacitance --- 270 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 32 mJ
|AR Avalanche Current LO _ 10 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 100 integral reverse G E
(Body Diode) Ci) p-n junction diode. R
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 10A, l/ss = 0V ©
trr Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 10A, VDD = 15V
er Reverse Recovery Charge - 16 24 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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