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IRF7413ZTR
Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
PD - 94646A
IRF7413Z
HEXFET® Power MOSFET
Applications
o Control FET for Notebook Processor Voss Fhoson) max ID
Power 30V 10mf2@Vas = 10V 13A
0 Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems s nrp I 8313 D
s :112 H 7:1] D
3 t: 6
Benefits s ID LIL] D
o Ultra-Low Gate Impedance G M4 s-UL] D
q Very Low RDS(0n) Top View SO-8
0 Fully Characterized Avalanche Voltage
and Current
0 100% Tested for Be
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 13
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 10 A
IDM Pulsed Drain Current T 100
PD ©T, = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Fur, Junction-to-Drain Lead - 20 °C/W
RM Junction-to-Ambient © _ 50
Notes C) through © are on page 10
6/30/05
IRF7413Z
International
Static tii) Tu = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250uA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 8.0 10 mn VGS = 10V, ID = 13A ©
- 10.5 13 Vas = 4.5V, ID = 10A ©
szm.) Gate Threshold Voltage 1.35 1.80 2.25 v I/as = Vas, ID = 250pA
AVGSUm/ATJ Gate Threshold Voltage Coefficient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 VDS = 24V, Vas = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 62 - - S Ihos = 15V, ID = 10A
q, Total Gate Charge - 9.5 14
0951 Pre-Vth Gate-to-Source Charge - 3.0 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC Vss = 4.5V
di Gate-to-Drain Charge - 3.0 - ID = 10A
qud, Gate Charge Overdrive - 2.5 - See Fig. 16
Qsw Switch Charge (0952 + di) - 4.0 -
Qoss Output Charge - 5.6 - nC VDs = 15V, Vas = 0V
Ra Gate Resistance - 2.3 4.5 Q
tdwn) Turn-On Delay Time - 8.7 - Voc, = 16V, Vas = 4.5V
t, Rise Time - 6.3 - ID = 10A
tum) Turn-Off Delay Time - 11 - ns Clamped Inductive Load
1, Fall Time - 3.8 -
Ciss Input Capacitance - 1210 - Vss = 0V
Coss Output Capacitance - 270 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 32 mJ
IAR Avalanche Current (O) - 10 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the H]:
G, Pulsed Source Current - - 100 integral reverse G E
(Body Diode) co p-n junction diode. cl
I/sro Diode Forward Voltage - - 1.0 V To = 25°C, IS = 10A, VGS = 0V ©
in Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 10A, Va, = 15V
Q,, Reverse Recovery Charge - 16 24 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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