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IRF7413TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95017C
|RF7413PbF
HEXFET© Power MOSFET
International
TOR Rectifier
Generation VTechnology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
100% Re Tested
Lead-Free
' 3:130
VDSS = 30V
RDS(0n) = 0.0119.
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a widevariety ofapplications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and SO-8
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, orwave soldering techniques. Powerdissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Symbol Parameter Max Units
Vos Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V 13
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 9.2 A
IDM Pulsed Dram Current 0) 58
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 mW/°C
EAS Single Pulse Avalanche Energency L2) 260 mJ
dv/dt Peak Diode Recovery dv/dt co 5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Symbol Parameter Typ Max Units
Rom. Junction-to-Drain Lead - 20 o
Ross Junction-to-Ambient © - 50 C/ W
1
02/11/08
lRF7413PbF
International
TOR Rectifier
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.034 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.011 Q Vss = IOM, ID = 7.3A ©
- - 0.018 Vas = 4.5V, ID = 3.7A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDS = Vas, [D = 250pA
gfs Forward Transconductance 10 - - S Vos = 10V, ID = 3.7A
I D . -t -s L k C t - - 12 A Vrss = 30v, Vss = ov
DSS ram o ource ea age urren - - 25 p Vos = 24V, Vss = 0V, To = 125°C
Gate-to-Source Forward Leakage - - -100 I/ss = -20V
lass Gate-to-Source Reverse Leakage - - 100 nA l/ss = 20V
A Total Gate Charge - 52 79 ID = 7.3A
Qgs Gate-to-Source Charge - 6.1 9.2 nC Vrss = 24V
09.1 Gate-to-Drain ("Miller") Charge - 16 23 I/ss = 10V, See Fig. 6 and 9 ©
Re Gate Resistance - - 3.7 Q
tu(on) Turn-On Delay Time - 8.6 - VDD = 15V
t, Rise Time - 50 - ID = 7.3A
td(off) Turn-Off Delay Time - 52 - ns Rs = 6.2 Q
t, Fall Time - 46 - Rs = 2.09, See Fig. 10 GD
Ciss Input Capacitance - 1800 - l/ss = 0V
Cass Output Capacitance - 680 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol _ D
(Body Diode) A showing the it
ISM Pulsed Source Current - - 58 integral reverse G (tL',
(Body Diode) C) p-n junction diode. A
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 7.3A, VGS = 0V ©
trr Reverse Recovery Time - 74 110 ns Tu = 25°C, IF = 7.3A
Qrr Reverse Recovery Charge - 200 300 nC di/dt = 100A/ps ©
Notes:
© ISD S 7.3A, di/dtE100A/ps, VDD S V(BR)ross,
Tus 150''C
G) Pulse width S 300ps; duty cycle S 2%.
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 9.8mH
Rc = 259, IAS =7.3A. (See Figure 12) 6) Surface mounted on FR-4 board
© R0 is measured at Tu approximately 90°C
2
