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IRF7413Q-IRF7413QPBF
30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
END OF LIFE
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
Description
These HEXFET6 Power MOSFET's in SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these H EXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremelyefficientand reliable device for use in awide
variety of applications.
The efficient SO-8 package provides enhancedthermal
characteristics making it ideal in a variety of power
applications. This surface mountSO-8 can dramatically
gedulce board space and is also available in Tape &
PD - 96112B
|RF7413QPbF
HEXFET© Power MOSFET
VDSS = 30V
RDS(on) = 0.0119
package Standard Pack .
Base part number Orderable part number Type Form Quantity EOL Notice Replacement Part Number
IRF7413t2PbF lRF7413t2TRPbF SCH, Tape and Reel 4000 EOL 529 Please search the EOL Dian number on IR's website for
IRF7413QPbF SCH, Tube 95 EOL 529 guidance
Absolute Maximum Ratings
Symbol Parameter Max Units
Vos Drain-to-Source Voltage 30 V
vss Gate-to-Source Voltage A 20
ID @ TA = 25°C Continuous Drain Current, l/ss © 10V 13
ID @ TA = 70°C Continuous Drain Current, l/ss © 10V 9.2 A
IDM Pulsed Drain Current C) 58
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 mW/°C
EAS Single Pulse Avalanche Energency © 260 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Symbol Parameter Typ Max Units
Fur, Junction-to-Drain Lead © -- 20 a C /W
RSJA Junction-to-Ambient ©© - 50
1
06/17/14
13QPbF
END OF LIFE
International
TOR Rectifier
Electrical Characteristics © Td = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
AV(BFK)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.034 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.011 Q Vss = lov, ID = 7.3A ©
- - 0.018 Vss = 4.5V, ID = 3.7A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250PA
gts Forward Transconductance IO - - S Vos = 10V, ID = 3.7A
I Drain-to-So rce Leaka e C rrent - - 12 A Vos = 30V, l/ss = 0V
DSS I u g u - - 25 p l/rss = 24V, l/ss = OV, T, = 125°C
Gate-to-Source Forward Leakage - - -100 l/as = -20V
lass Gate-to-Source Reverse Leakage - - 100 nA Vas = 20V
q, Total Gate Charge - 52 79 b = 7.3A
Qgs Gate-to-Source Charge - 6.1 9.2 1/ros = 24V
di Gate-to-Drain ("Miller") Charge 16 23 nC l/es = 10V, See Fig. 6 and 9 ©
Re Gate Resistance 1.2 - 3.7
tum) Turn-On Delay Time - 8.6 - VDD = 15V
t, Rise Time - 50 - ID = 7.3A
td(off) Turn-Off Delay Time - 52 - ns Rs = 6.2 f2
t: Fall Time - 46 - Rs = 2.09, See Fig. 10 ©
Ciss Input Capacitance - 1800 - Ves = 0V
Coss Output Capacitance - 680 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 240 --.- f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol /; D
(Body Diode) A showing the 2:
ISM Pulsed Source Current -- -- 58 integral reverse 8%:
(Body Diode) CD p-n junction diode. R
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 7.3A, VGS = 0V ©
trr Reverse Recovery Time - 74 110 ns To = 25°C, IF = 7.3A
Qrr Reverse Recovery Charge - 200 300 nC di/dt = 100A/ps OD
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Q) Starting T: = 25°C, L =9.8mH
RG = 259, IAS =7.3A. (See Figure 12)
C3) ISD S 7.3A, di/dt S 100/Ups, VDD S V(BR)DSS,
T Js 150°C
© Pulse width I 300ps; duty cycle 3 2%.
s Surface mounted on FR-4 board
© Re is measured at Tu approximately 90°C
