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IRF7410-IRF7410 TR-IRF7410TR
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International PD-94025A
TOR Rectifier IRF7410
HEXFETID Power MOSFET
0 Ultra Low On-Resistance V R
. P-Channel MOSFET 125‘ mg“ - 4 5V J,
0 Surface Mount GS - . -
0 Available in Tape & Reel 9mQ@VGS = -2.51/ -13.6A
13mQ@VGs = -1.8V -11.5A
Description
These P-Channel HEXFET*) Power MOSFETs from s m1 ' a D
International Rectifier utilize advanced processing CTE
techniquesto achieve the extremely Iowon-resistance s LLUZ H 'u, D
per silicon area. This benefit provides the designer 3 ill 6
with an extremely efficient device for use in battery s CIE] E D
and load management applications.. G D314 5 D
The SO-8 has been modified through a customized . SO-8
leadframe for enhanced thermal characteristics and Top View
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -4.5V -16
ID @ TA-- 70°C Continuous Drain Current, Ves @ -4.5V -13 A
IDM Pulsed Drain Current co -65
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage t-8 V
To, TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 "C/W
1
8/2/06
IRF74'10
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V Ves = 0V, ID = -250pA
M(Bmoss/ATJ Breakdown Voltage Temp. Coefficient - 0.006 - V/°C Reference to 25°C, ID = -1mA
RDSW) Static Drain-to-Source On-Resistance - - 7 I/ss = -4.5V, ID = -16A ©
- - 9 rnf2 Vss = -2.5V, ID = -13.6A ©
- - 13 Vss---1.8V, |D=-11.5A®
VGS(!h) Gate Threshold Voltage -0.4 - -O.9 V Vos = Vss, ID = -250pA
gfs Forward Transconductance 55 - - S Vos = -1OV, ID = -16A
loss Drain-to-Source Leakage Current - - -1.0 PA VDS = -9.6V, Vas = 0V
- - -25 VDS = -9.6V, Vas = OV, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -8V
Gate-to-Source Reverse Leakage - - 100 Vas = 8V
% Total Gate Charge - 91 - ID = -16A
chs Gate-to-Source Charge - 18 - nC Vos = -9.6V
di Gate-to-Drain ("Miller") Charge - 25 - Vss = -4.5V ©
td(on) Turn-On Delay Time - 13 20 ns VDD = -6V, Vas = -4.5V
tr Rise Time - 12 18 ID = -1.0A
tam) Turn-Off Delay Time - 271 407 RD = 69
tt Fall Time - 200 300 Ra = 69 ©
Ciss Input Capacitance - 8676 - Vas = 0V
Coss Output Capacitance - 2344 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 1604 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 A showing the
ISM Pulsed Source Current _ - -65 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.5A, VGS = 0V ©
trr Reverse Recovery Time -- 97 145 ns Tu = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 134 201 pC di/dt = -1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width s 400ps; duty cycle s 2%.
Cs) Surface mounted on 1 in square Cu board, t s 10sec.
