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IRF740AS-IRF740ASTRL-IRF740ASTRR
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
Applications
. Switch Mode Power Supply ( SMPS )
o Uninterruptable Power Supply
0 High speed power switching
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
SMPS MOSFET
PD- 92005
IRF740AS/ L
HEXFET© Power MOSFET
VDSS Rds(on) max ID
400V 0.559 10A
Avalanche Voltage and Current D 2 Pak T0-262
o Effective Coss specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 1OV© 10
ID @ To = 100°C Continuous Drain Current, VGS @ 10V© 6.3 A
G, Pulsed Drain Current (06) 40
Pro @TA = 25°C Power Dissipation 3.1 W
PD @Tc = 25°C Power Dissipation 125
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt ©© 5.9 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies:
0 Single transistor Flyback Xfmr. Reset
o Single Transistor Forward Xfmr. Reset
( Both for US Line Input only )
Notes (D
through (S) are on page 10
9/14/99
IRF740AS/L
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 400 - - V Veg = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.48 - V/°C Reference to 25°C, ID = 1mA©
Roam Static Drain-to-Source On-Resistance - - 0.55 Q VGS = 10V, ID = 6.0A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V v.35 = VGS, Io = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 400V, VGS = 0V
- - 250 Ws = 320V, VGS = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A N/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.9 - - S Vos = 50V, ID = 6.0A©
% Total Gate Charge - - 36 ID = 10A
095 Gate-to-Source Charge - - 9.9 nC Vos = 320V
di Gate-to-Drain ("Miller") Charge - - 16 N/ss = 10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 10 - VDD = 200V
tr Rise Time - 35 - ns ID = 10A
td(off) Turn-Off Delay Time - 24 - Rs = lon
tr Fall Time - 22 - RD = 19.5Q,See Fig. 10 ©©
Ciss Input Capacitance - 1030 - V63 = 0V
C055 Output Capacitance - 170 - Vros = 25V
Crss Reverse Transfer Capacitance - 7.7 - pF f = 1.0MHz, See Fig. 5©
Coss Output Capacitance - 1490 - Veg = 0V, V03 = 1.0V, f = 1.0MHz
Coss Output Capacitance - 52 - VGs = 0V, VDs = 320V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 61 - VGS = 0V, VDs = 0V to 320V S©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 630 mJ
IAR Avalanche Current© - 10 A
EAR Repetitive Avalanche Energy© - 12.5 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 1.0 °C/W
ReJA Junction-to-Ambient ( PCB Mounted, steady-state)' - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 10 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 4O p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V To = 25°C, Is = 10A, VGS = 0V co
trr Reverse Recovery Time - 240 360 ns To = 25°C, IF = 10A
Qrr Reverse RecoveryCharge - 1.9 2.9 pC di/dt = 1OOA/ps C06)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
