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IRF7403-IRF7403TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectiferutilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
PRELIMINARY
PD - 9.1245B
IRF7403
Top View
VDSS = 30V
RDS(on) = 0.0229
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 9.7
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 8.5
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 5.4 A
IDM Pulsed Drain Current C) 34
Pro @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGs Gate-to-Source Voltage A20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RNA Maximum Junction-to-Ambient/D - 50 °CNV
8/25/97
IRF7403
International
TOR 'k)ctifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
Av(,3R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.022 VGS = 10V, ID = 4.0A ©
R Stat c Dra n-to-So roe On-Res stance Q
DS(ON) I I u I - - 0.035 VGS = 4.5V, ID = 3.4A ©
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = VGs, ID = 250PA
gfs Forward Transconductance 8.4 - - S Vros = 15V, ID = 4.0A
. - - 1.0 Vros = 24V, VGS = 0V
loss Drain to Source Leakage Current - - 25 p Vos = 24V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 57 ID = 4.0A
Qgs Gate-to-Source Charge - - 6.8 no Vros = 24V
di Gate-to-Drain ("Miller") Charge - - 18 VGS = 10V, See Fig. 6 and 12 ©
tiiion) Turn-On Delay Time - 10 - VDD = 15V
tr Rise Time - 37 - ns ID = 4.0A
trust) Turn-Off Delay Time - 42 - Rs = 6.09
tf Fall Time - 40 - RD = 3.79, See Fig. 10 ©
k Internal Drain Inductance - 2.5 - . D
nH Between lead tip )
and center of die contact G
Ls Internal Source Inductance - 4.0 -
Ciss Input Capacitance - 1200 - Was = 0V
Coss Output Capacitance - 450 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 34 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V T: = 25°C, Is = 2.0A, VGS = 0V ©
trr Reverse Recovery Time - 52 78 ns TJ = 25°C, IF = 4.0A
Qrr Reverse RecoveryCharge - 93 140 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISD S 4.0A, di/dt S 180A/ps, VDD S V(BR)ross,
TJ f 150°C
© Pulse width 3 300ps; duty cycles 2%.
© Surface mounted on FR-4 board, ts 10sec.
