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IRF7402TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95202
International
Tart, Rectifier |RF7402PbF
HEXFET6 Power MOSFET
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
siliconarea.Thisbenefit,combinedwiththefastswitching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
VDSS = 20V
SID D RDS(on) = 0.0359
Top View
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.8
ID @ TA = 70°C Continuous Drain Current, Ves @ 4.5V 5.4 A
IDM Pulsed Drain Current co 54
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage t12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To,Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient co 50 "C/W
1
9/30/04
IRF7402PbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
RDSW) Static Drain-to-Source On-Resistance - 0.035 Q l/ss = 4.5V, ID = 4.1A ©
- 0.050 l/ss = 2.7V, ID = 3.5A ©
VGS(th) Gate Threshold Voltage 0.70 - - V Vos = Vas, ID = 250PA
gfs Forward Transconductance 6.1 - - S VDs = 10V, ID = 1.9A
bss Drain-to-Source Leakage Current - - 1 .0 p A Vros = 16V, Vss = 0V
- - 25 Vos = 16V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 l/ss = -12V
09 Total Gate Charge - 14 22 ID = 3.8A
Qgs Gate-to-Source Charge - 2.0 3.0 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - 6.3 9.5 Vss = 4.5V, See Fig. 6 and 12 ©
Won) Turn-On Delay Time - 5.1 - VDD = 10V
t, Rise Time -- 47 -- ns ID = 3.8A
tu(st) Turn-Off Delay Time - 24 - Rs = 6.29
tt Fall Time - 32 - RD = 2.69 ©
Ciss Input Capacitance - 650 - l/ss = 0V
Coss Output Capacitance - 300 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse 6
(Body Diode) co - - 54 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V Tu = 25°C, Is = 3.8A, l/ss = 0V ©
trr Reverse Recovery Time - 51 77 ns Tu = 25°C, IF = 3.8A
Qrr Reverse Recovery Charge - 69 100 nC di/dt = 100A/ys©
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© [SD S 3.8A, di/dt S 96Alps, VDD S VoRpss,
TJs150°C
© Pulse width f 300ps; duty cycle 5 2%.
© When mounted on 1 inch square copper board, t<10 sec
(S) This data sheet has curves & data from IRF7601
