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IRF7401-IRF7401TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-9.1244c
TOR Rectifier IRF7401
HEXFET© Power MOSFET
Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
VDSS = 20V
RDS(0n) = 0.022n
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. VWhthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25''C 10 Sec. Pulsed Drain Current, Ves @ 4.5V 10
ID @ TA = 25°C Continuous Drain Current, l/cs @ 4.5V 8.7
In @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0
IDM Pulsed Drain Current C) 35
Po @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 Wl°C
l/ss Gate-to-Source Voltage d: 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To,Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient) - 50 ''C/W
02/13l01
IRF7401 International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.044 - V/''C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.022 Q VGS = 4.5V, ID = 4.1A ©
- - 0.030 VGs = 2.7V, ID = 3.5A ©
VGS(th) Gate Threshold Voltage 0.70 - - v Vos = Yas, ID = 250pA
gfs Forward Transconductance 11 - - S Vos = 15V, ID = 4.1A
. - - 1.0 Vos =16V,VGS = OV
I Drain-to-Source Leaka e Current A
DSS g - - 25 u Vos = 16V, Vss = 0v, To = 125 °c
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGs = -12V
% Total Gate Charge - - 48 ID = 4.1A
Qgs Gate-to-Source Charge - - 5.1 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 20 N/ss = 4.5V, See Fig. 6 and 12 ©
tdmn) Turn-On Delay Time - 13 - Vor, = 10V
tr Rise Time - 72 - ns ID = 4.1A
tam) Turn-Off Delay Time - 65 - Rs = 6.on
tr Fall Time - 92 - RD = 2.49, See Fig. 10 ©
L Internal Drain Ind ctance - 2.5 -
D I u nH Between lead tip E )
and center of die contact G
Ls Internal Source Inductance - 4.0 -
Ciss Input Capacitance - 1600 - VGs = 0V
Coss Output Capacitance - 690 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 310 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 3 1 MOSFET symbol D
(Body Diode) - - . showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 35 p-n junction diode. s
l/so Diode Forward Voltage - - 1.0 V To = 25°C, Is = 2.0A, VGS = 0V ©
tn Reverse Recovery Time - 39 59 ns To = 25°C, IF = 4.1A
Q,, Reverse RecoveryCharge - 42 63 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
© Repetitive rating; pulse width limited by co Pulse width f 300ps; duty cycle 3 2%.
max. junction temperature. ( See Fig. 11 )
© la, S 4.1A, di/dt S 100Alps, VDD s V(BR)DSS! © Surface mounted on FR-4 board, ts: 10sec.
T J f 150''C
