IRF740. ,10A, 400V, 0.550 Ohm, N-Channel Power MOSFETIRF740®N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220PowerMESH™ MOSFETTYPE V R IDSS DS(on) DIRF740 400 ..
IRF740.. ,10A, 400V, 0.550 Ohm, N-Channel Power MOSFETInternational
EOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
. Repetitive Aval ..
IRF7401 ,Thermoelectric Cooler ControllerPD - 9.1244CIRF7401®HEXFET Power MOSFET Generation V TechnologyAA1 8S D Ultra Low On-ResistanceV ..
IRF7401TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1244CIRF7401®HEXFET Power MOSFET Generation V TechnologyAA1 8S D Ultra Low On-ResistanceV ..
IRF7402 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93851AIRF7402®HEXFET Power MOSFETl Generation V TechnologyAAl Ultra Low On-Resistance 1 8S Dl ..
IRF7402TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramati ..
ISL1532IRZ-T13 , Dual Channel Differential DSL Line Driver
ISL1532IRZ-T13 , Dual Channel Differential DSL Line Driver
ISL1532IRZ-T7 , Dual Channel Differential DSL Line Driver
ISL1535AIVEZ , Dual Channel Central Office ADSL2 Line Driver
ISL1535AIVEZ , Dual Channel Central Office ADSL2 Line Driver
ISL1535IVEZ-T13 , Dual Channel Central Office ADSL2 Line Driver
IRF740-IRF740.
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
IRF740N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
October 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤10 A, di/dt ≤120 Α/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRF7402/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
IRF7403/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
IRF7404/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRF7405/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 1: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
IRF7406/8
