IRF7389 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7389 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7389 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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IRF7389-IRF7389TR
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 91645A
International
Tart, Rectifier IRF7389
HEXFET® Power MOSFET
0 Generation V Technology N-CHANNELMOSFET
0 Ultra Low On-Resistance SI nr'- um) N-Ch P-Ch
o Complimentary Half Bridge G1 W2 W D
. Surface Mount 3 VDss 30V -30V
. Fully Avalanche Rated S2 Cllr'- E D
G2 El:4 331 D
P-CHANNELMOSFET RDS(on) 00299 0.0589
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, SO-8
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage V08 30 -30
Gate-Source Voltage Vss i 20
Continuous Drain Currents TA =25 C 7.3 -5.3
TA = 70°C 5.9 -4.2 A
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) ls 2.5 -2.5
. . . . TA =25°C 2.5
Maximum Power Dissipation S TA = 70''C 1.6 W
Single Pulse Avalanche Energy EAS 82 140 m]
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 m]
Peak Diode Recovery dv/dt © dv/dt 3.8 -2.2 V/ ns
Junction and Storage Temperature Range TJ,TSTG -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient © ReJA 50 'CM/
1
02/25/04
IRF7389
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 3O - - Ves = 0V, ID = 250pA
V D -t -S B kd V It
(BR)DSS ram 0 ource rea own o age P-Ch -30 - - V Ves = 0V,lD= -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coemcient tg: I 33:: I 1//'C 1:22:22: I' igeg’ :3 : hm
N Ch - 0.023 0.029 Vcs = 10v, ID = 5.8A ©
. . . - - 0.032 0.046 VGs = 4.5V ID = 4.7A CI)
R Static DraIn-to-Source On-Resistance '
DS(ON) P-Ch - 0.042 0.058 Q sz = -10v, ID = -4.9A ©
- 0.076 0.098 VGS = -4.5V, ID = -3.6A ©
Vegan) Gate Threshold Voltage 2:3: _11% I I V x: : tt :3 : 'lit)
gts Forward Transconductance 'tg,' - r, - s "dt i 2r, IF l-et ©
- - . - DS - - , D - - .
N-Ch - - 1.0 Vos = 24V, VGS = 0V
. P-Ch - - -1.0 1hos = -24V, Vas = 0V
I D -t -S L k C t
DSS ram 0 ource ea age urren N-Ch - - 25 pA Vros = 24V, VGS = OV, T., = 55''C
P-Ch - - -25 Ws = -24V, VGs = 0V, TJ = 55''C
less Gate-to-Source Forward Leakage N-P - - +_100 nA VCs = 120V
Qg Total Gate Charge 't2 I fi 3 N-Channel
N-Ch 2 6 3 9 ID = 5.8A, Vos =15V,VGS =10V
Qgs Gate-to-Source Charge P Ch - 3-8 5'7 nC @
N:Ch I 6-4 9-6 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 5'9 [G ID = -4.9A, Vos = -15V, VGS = .1ov
tam”) Turn-On Delay Time 2:32 I 81‘; g N-Channel
. . N-Ch - 8 9 13 vDD =15V,b =1.0A,RG = 6.on,
tr Rise Time P-Ch - E 20 RD = 159
tdestr) Turn-Off Delay Time 2:52 I :3 :3 P-Channel
vDD = -15v, ID = -1.0A, RG = 6.09,
. N-Ch - 17 26 -
tr Fall Time P-Ch - 32 48 RD - 159
_ . N-Ch - 650 - N-Channel
Ciss Input Capacitance P-Ch - 710 - VCs = ov, Vos = 25V, f = 1.0MH2
Coss Output Capacitance t2 I 3:3 I pF P-Channel
Crss Reverse TransferCapacitance 'lfil1 - "dd - VGS = OV, Vros = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Tvp Max. Units Conditions
. . N-Ch - - 2.5
Is Continuous Source Current (Body Diode) P-Ch - - -2.5 A
. N-Ch - - 30
ISM Pulsed Source Current (Body Diode) co P-Ch - - -30
. N-Ch - 0.78 1.0 V TJ = 25''C, Is = 1.7A, VGs = 0V (3)
VSD Diode Forward Voltage P-Ch - -0.78 -1.0 T: = 25''C, Is = M.7A, VGS = OV (3
. N-Ch - 45 68 N-Channel
trr Reverse Recovery Time P-Ch - 44 66 ns To = 25''C, IF =1.7A, di/dt = 100A/ps
N-Ch - 58 87 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 42 63 " T J = 25°C, IF = -1.7A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
© N-Channel la, S 4.0A, di/dt S 74/Ups, VDD S V(BR)DSS: Tu S 150°C
P-Channel ISD S -2.8A, di/dt S 150A/ps, VDD S V(BR)Dss, Tu S 150°C
© N-Channel Starting Tu = 25°C, L =10mH Rs = 259, IAS-- 4.0A. (See Figure 12)
P-Channel Starting Tu = 25°C, L = 35mH Rs = 259, IAS-- -2.8A.
© Pulse width S 300ps; duty cycle 3 2%.
S Surface mounted on FR-4 board, ts 10sec.
