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IRF737LC
300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Ilrtietpatipoal
IOR Rectifier
PRELIMINARY
PD - 9.1314
RF737LC
HEXFET® Power MOSFET
Reduced Gate Drive Requirement
Enhanced 30V I/ss Rating
Reduced Css, Cosa CRSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFETs achieve
signifcantly lowergate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efhciency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
VDSS = 300V
FN RDS(on) = 0.759
FI ID = 6.1A
ruggedness and reliability that are characteristics of T0-220AB
HEXFETs offer the designer a new standard in power
transistors for switching applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 6.1
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 3.9 A
IDM Pulsed Drain Current OD 24
Pro @Tc = 25°C Power Dissipation 74 W
Linear Derating Factor 0.59 W/°C
Veg Gate-to-Source Voltage 130 V
EAS Single Pulse Avalanche Energy © 120 m1
IAR Avalanche Current© 6.1 A
EAR Repetitive Avalanche Energy© 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
TJ Operating Junction and -55 to + 150
TsTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rooc Junction-to-Case - - 1.7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - ''C/W
RQJA Junction-to-Ambient - - 62
IRF737LC
Electrical Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.391 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.75 n VGS = 10V, ID = 3.7A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 2.7 - - S Vos = 50V, ID = 3.7A
Koss Drain-to-Source Leakage Current _ - 22550 pA V: = gggx V: = g, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 17 ID = 6.1A
Qgs Gate-to-Source Charge - - 4.8 nC Vos = 240V
di Gate-to-Drain ("Miller") Charge - - 7.6 VGS = 10V, See Fig. 6 and 13 (D
tam”) Turn-On Delay Time - 6.6 - VDD = 150V
tr Rise Time - 21 - ID = 6.1A
td(off) Turn-Off Delay Time - 13 - ns Rs = 12n
tf Fall Time - 12 - Ro = 249, See Fig. 10 ©
u, Intemal Drain Inductance - 4.5 - Between lead, D
6mm (0.25m.)
nH from package (i)
Ls Internal Source Inductance - 7.5 - and center of die contact '
Ciss Input Capacitance - 430 - VGS = 0V
Cogs Output Capacitance - 120 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 9.2 - l f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol _r-\_\
(Body Diode) - - 6.1 A showing the j F i)
13M Pulsed Source Current - - 24 Integral reverse "le-ln 2,“
(Body Diode) (D p-n Junction dloae. '--' c,
l/sro Diode Forward Voltage - - 1.6 V TJ = 25°C, ls = 6.1A, VGS = 0V ©
trr Reverse Recovery Time - 320 490 ns T: = 25°C, IF = 6.1A
Qrr Reverse RecoveryCharge - 1.5 2.2 pC di/dt = 100Alps ©
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 5.7mH
Rs = 259, IAS = 6.1A. (See Figure 12)
© ISD S 6.1A, di/dt f 270A/ps, VDD S V(BR)DSSv
TJ S 150°C
co Pulse width s: 300ps; duty cycle LC 2%.
