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IRF7379ITRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
PD - 96089
International
Tart, Rectifier IRF7379IPbF
HEXFET© Power MOSFET
q Generation V Technology N-CHANNELMOSFET
. Ultra Low On-Resistance SI nr'- BJJJD N-Ch P-Ch
o Complimentary Half Bridge G1 W2 W D
. Surface Mount 3 Voss 30V -30V
q Fully Avalanche Rated S2 DI_ E D
- G2 CII‘ 113 D
q Lead Free P-CHANNELMOSFET RDS(on) 00459 0.090Q
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. 1/NfIththese improvements, multiple
devices can be used in an application with dramatically SO-8
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Units
N-Channel P-Channel
Vso Drain-to-Source Voltage 30 -30
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 5.8 -4.3 A
In @ TA = 70''C Continuous Drain Current, VGS @ 10V 4.6 -3.4
IDM Pulsed Drain Current (D 46 -34
Po @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
Vss Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 -5.0 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Max. Units
RSJA Maximum Junction-to-Ambient® 50 °C/W
1
07/07/06
IRF7379IPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 30 - - sz = OV, ID = 250pA
V D a -to-So eB eakdownV Ita e
(BR)DSS r In urc r o 9 P-Ch -30 - - V Vas = OV, ID = -250pA
. N-Ch - 0.032 - Reference to 25''C, ID = 1mA
AV AT B kd V It T . C m t "
‘BR’DSS/ J rea own o age emp oe 'c'en P-Ch - -0.037 - V/ c Reference to 25''C, ID = -1mA
MCh - 0.038 0.045 VGS = 10V, lo = 5.8A (3)
RDS(ON) Static Drain-to-Source On-Resistance - 0055 0.075 Q VGS = CEN, ID = 4SA (D
P-Ch - 0.070 0.090 VGS = -1OV, ID =- 4.3A 2
- 0.130 0.180 VGs = -4.5V, ID =- 3.7A a
VGth) Gate Threshold Voltage NAm 1.0 - - V Vros = l/ss, ID = 250pA
P-Ch -1.0 - - Vos = l/ss, lo = -250pA
gfs Forward Transconductance NCh 5.2 - - S Vos = 15V, ID = 2.4A 8)
P-Ch 2.5 - - Vos = -24V, ID = -1.8A (9
N-Ch - - 1.0 Vos = 24 V, VGS = ov
. P-Ch - - -1.0 Vos = -24V, VGS = ov
I D - - L k
DSS ram to Source ea ageCurrent N-Ch - - 25 “A bbs-- 24 V, VGS = 0V, Tu = 125°C
P-Ch - - -25 v.33 = -24v, Vss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage N-P - - i100 VGS = , 20V
Qg Total Gate Charge :3: I I , N-Channel
Q s Gate-to-Source Charge N42h - - 2.9 nC b = 2AA, Vos = 24V, VGS = 10V ©
g P-Ch - - 2.9 P Channel
di Gate-to-Drain("Miller")Charge 2:8: _- _- 33 lo = -1.8A, N/os = -24V, VGS = -10V
td(on) Turn-On Delay Time Yi", _- 6118 _- N-Channel
. . NCh - 21 - vDD =15V, ID = 2.4A, RG = 6.09,
tr RiseTime P-Ch - 17 - RD = 529
td(ott) Turn-Off Delay Time 2:2: I g I P-Channel
. N-Ch - 7 7 - Vroro = -151/, ID = -1.8A, Rs = 6.09,
tr FallTime P-Ch - id - RD = 8.29
u, Internal Drain Inductace N-P - 4.0 - H Between lead, 6mm (0.25in.) from
Ls Internal Source Inductance N-P - 6.0 - n package and center of die contact
Ciss Input Capacitance 3g: I ie I N-Channel
Vss = OV, vDs = 25V, f = 1.0MHz
. N-Ch - 180 -
Coss Output Capacitance P-Ch - 200 - pF P-Channel ®
Crss Reverse TransferCapacitance SE: I 3:23 I VGs = 0V, Vos = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
N-Ch - - 3.1
ls Continuous Source Current (Body Diode) P-Ch - - -3.1 A
N-Ch - - 46
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -34
N-Ch - - 1.0 T = 25''C.l =1.8A.V =0N/©
. V J , s , GS
VSD Diode Forward Voltage P-Ch - - -1.o Tu = 25°C, IS = -1.8A, N/ss = OV ©
. N-Ch - 47 71 N-Channel
hr Reverse RecoveryTime P-Ch - 53 80 Tu = 25°C, IF = 2.4A, di/dt = 100A/ps
N-Ch - 56 84 P-Channel
q, Reverse Recovery Charge P-Ch - 66 99 " T: = 25°C, IF = -1.8A, di/dt = -100/Ups
Notes:
co Repetitive rating; pulse width limited by © Pulse width LC 300ps; duty cycle s: 2%.
max. junction temperature. ( See fig. 10 )
© N-Channel Isrof 2.4A, di/dt s: 73A/ps, VDDS V(BR)Dss, TJ S 150°C co Surface mounted on FR-4 board, t s 10sec.
P-Channel ISD S -1.8A, di/dt S 90A/ps, VDD S V(BR)DSS: Tu S 150°C
2
