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IRF7379-IRF7379TR
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 91625
International
152R Rectifier IRF7379
HEXFET*) Power MOSFET
0 Generation V Technology N-CHANNELMOSFET
o Ultra Low On-Resistance Sl [rml- 83:0 N-Ch P-Ch
o Complimentary Half Bridge G1 2 71 D
o Surface Mount 3 6 VDSS 30V -30V
o Fully Avalanche Rated S2 m_ E o
G2 4 5:: D
P-CHANNELMOSFET RDS(on)OO45Q 00909
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple s C) -8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
VSD Drain-to-Source Voltage 30 -30
ID © TA = 25''C Continuous Drain Current, VGs @ 10V 5.8 -4.3 A
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 4.6 -3.4
IDM Pulsed Drain Current C) 46 -34
Pp @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGs Gate-to-Source Voltage k 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 -5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Max. Units
RNA Maximum Junction-to-Ambient) 50 °CNV
1
12/8/98
IRF7379
International
TGR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 30 - - VGS = 0V, ID = 250PA
V Drain-to-Source BreakdownVolta e
(BR)DSS g P-Ch -30 - - V sz = 0v, ID = -250pA
. N-Ch - 0.032 - Reference to 25°C I = 1mA
AV INT B k V I T . ff C ' D
(BR)DSS J rea down 0 tage emp Coe Idem P-Ch - -0.037 - W C Reference to 25°C, ID = -1mA
N-Ch - 0.038 0.045 VGS = 10V, ID = 5.8A ©
. . . - 0.055 0.075 VGS = 4.5V, ID = 4.9A ©
R Stat c Dra n-to-So rce On-Res stance
DS(ON) I I U I P-Ch - 0.070 0.090 fl VGS = -10V, ID =- 4.3A ©
- 0.130 0.180 VGS = -4.5V, ID =- 3.7A ©
N-Ch 1.0 - - V =V I =250A
v GateTh holdVolt DS 630 p
GS(th) a e res o o age P-Ch -1.0 - - V vDs = VGs, ID = -250pA
gts Forward Transconductance ES: id I I s "tg, : c'i'l'ityfi'i1 A © ©
N-Ch - - 1.0 Vos = 24 V, VGS = 0V
. P-Ch - - -1.0 Vrrs = -24V, VGS = 0V
I D - - L k
DSS ran to Source ea ageCurrent N-Ch - - 25 pA VDS = 24 V, VGS = 0V, To = 125°C
P-Ch - - -25 VDS = -24V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage N-P - - i100 VGS = l 20V
Qg Total Gate Charge :2: I I ii,' N-Channel
N-Ch - - 2 9 lo = 2.4A, Vos = 24V, VGS = 10V
Qgs Gate-to-SourceCharge . nC ©
P-Ch - - 2.9
. . N -Ch - - 7 9 P-Channel
di Gate-to-Draln("M||Ier")Charge P-Ch - - iG lo = -1 .8A, Ws = -24V, VGs = -10V
tdwn) Turn-On Delay Time 2:2: I (:18 I N-Channel
. . N-Ch - 21 - VDD = 15V, ID = 2.4A, Rs = 6.09,
tr Rise Time P-Ch - 17 - RD = 6.29
tum) Turn-Off Delay Time 23: I g: I P-Channel
. N-Ch - 7 7 - VDD = -15V, ID = -1.8A, Rs = 6.09,
t, FaIITIme P-Ch - 18 - RD = 8.29
LD Internal Drain Inductace N-P - 4.0 - H Between lead, 6mm (0.25in.) from
Ls Internal Source Inductance N-P - 6.0 - n package and center of die contact
Ciss Input Capacitance refill - gig - N-Channel
[Cl' - 180 - Ves = 0V, Vos = 25V, f = 1.0MHz
Cass OutputCapacitance P Ch - 200 - pF ©
N:Ch - 72 - P-Channel
Crss Reverse TransferCapacitance P-Ch I 93 I VGS = 0V, VDS = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
N-Ch - - 3.1
Is Continuous Source Current (Body Diode) P-Ch - - -3.1 A
N-Ch - - 46
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -34
. N-Ch - - 1.0 To = 25°C, ls = 1.8A, VGS = 0V ©
VSD Diode Forward Voltage P-Ch - - -1.0 To = 25°C, ls = -1.8A, VGS = 0V ©
. N-Ch - 47 71 N-Channel
trr Reverse Recovery Time P-Ch - 53 80 T J = 25°C, IF = 2.4A, di/dt = 100A/ps
N-Ch - 56 84 P-Channel CO
er Reverse Recovery Charge P-Ch - 66 99 nC To = 25''C, IF = -1.8A, di/dt = -1OOA/ps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See hg. 10 )
© N-Channel ISD S 2.4A, di/dt S 73A/ps, VDD S V(BR)DSS! Tu S 150°C
P-Channel ISD S -1.8A, di/dt f 90/Ups, VDD f V(BR)DSSa TJ f 150°C
© Pulse width f 300ps; duty cycle s: 2%.
© Surface mounted on FR-4 board, t S 10sec.
