IRF7343TR ,55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7343TR ,55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7350 ,100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multiple devices can beused in an application with dramatic ..
IRF7350TRPBF ,100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customized leadframe for enhancedthermal characte ..
IRF7350TRPBF ,100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 95367IRF7350PbF®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch1 8S1 D ..
IRF7351 ,60V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous Rectifier MOSFET for17.8mΩ @V = 10V60V 24nCGSIs ..
ISL12020M ,Real Time Clock with Embedded Crystal, ?ppm AccuracyBlock Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
ISL12024IBZ , Real-Time Clock/Calendar with Embedded Unique ID
ISL12026IBZ , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL12027 ,Real Time Clock/Calendar with EEPROMApplications(8 LD SOIC)TOP VIEW• Utility Meters• HVAC EquipmentX1 V1 DD8• Audio/Video ComponentsX2 ..
ISL12027IBAZ-T , Real Time Clock/Calendar with EEPROM
ISL12027IV27AZ , Real Time Clock/Calendar with EEPROM
IRF7343TR
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
:rartRectifier
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings
PD -91709A
IRF7343
HEXFET® Power MOSFET
:JACHANNEL MOSFE; N-Ch P-Ch
S1 LIL'- J_Li D1
GI FIT2 l 7TH D1
VDSS 55V -55V
S2 LIL:'- 6331 D2
G2 CII" LIE] D2
P-CHANNEL MOSFET RDS(on) 0.050Q 0.105Q
Top View
Parameter N-Channel P-Channel Units
VDs Drain-Source Voltage 55 -55 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 A
IDM Pulsed Drain Current co 38 -27
PD@TA= 25''C Maximum Power Dissipation (S) 2.0 W
PD@TA= 70°C Maximum Power Dissipation (9 1.3 W
Ess Single Pulse Avalanche Energy© 72 114 mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 m]
VGs Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt (2) 5.0 -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
Ram Maximum Junction-to-Ambient © - 62.5 "CAN
1
4/11/05
IRF7343
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 55 - - Ves = 0V, ID = 250pA
V D -t -S B kd V It
(BR)DSS ram 0 ource rea own o age P-Ch -55 - - V Ves = 0V,lD= -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coemcient tg: I 3'32: I V/°C 1:22:22: I' igeg’ :3 : 3:;
N Ch - 0.043 0.050 Vss = 10V, ID = 4.7A ©
. . . - - 0.056 0.065 VGs = 4.5V ID = 3.8A CI)
R Static DraIn-to-Source On-Resistance '
DS(ON) P-Ch - 0.095 0.105 Q sz = -10v, ID = -3.4A ©
- 0.150 0.170 Vss = -4.5V, ID = -2.7A ©
Vegan) Gate Threshold Voltage yil _11'% I I V x: : tt t : $553011};
gfs Forward Transconductance 'tg,' :1: - - s "dt : 11030 IF i4} ©
- . - - DS - - , D - - .
N-Ch - - 2.0 Vos = 55V, VGS = 0V
. P-Ch - - -2.0 VDs = -55V, Vas = 0V
I D -t -S L k C t
DSS ram 0 ource ea age urren N-Ch - - 25 pA Vros = 55V, VGS = OV, T., = 55''C
P-Ch - - -25 Ws = -55V, VGs = 0V, TJ = 55''C
less Gate-to-Source Forward Leakage N-P - - +_100 nA VCs = 120V
Qg Total Gate Charge 't2 I 14, i N-Channel
N-Ch 2 3 3 4 ID = 4.5A, Vos = 44V, VGS = 10V
Qgs Gate-to-Source Charge P-Ch I CG 4'5 nC @
N-Ch - Fr, G P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - iG 13 ID = -3.1A, Vos = -44V, VGS = .1ov
tam”) Turn-On Delay Time 2:32 I 'd g N-Channel
. . N-Ch - 3 2 4 8 VDD = 28V, b = 1.0A, Rs = 6.on,
tr Rise Time P-Ch - 1-0 E RD = 289
tdestr) Turn-Off Delay Time 2:52 I i: g P-Channel
VDD = -28V, lo = -1.0A, RG = 6.09,
. N-Ch - 13 20 -
tr Fall Time P-Ch - 22 32 RD - 289
_ . N-Ch - 740 - N-Channel
Ciss InputCapacitance P-Ch - 690 - VGS = 0V, Vos = 25V, f = 1.0MH2
Cass Output Capacitance t2 I £3 I pF P-Channel
Crss Reverse Transfer Capacitance 'lfil1 - 2 - Ves = 0V, VDs = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
. . N-Ch - - 2.0
Is Continuous Source Current (Body Diode) P-Ch - - -2.0 A
. N-Ch - - 38
ISM Pulsed Source Current (Body Diode) co P-Ch - - -27
. N-Ch - 0.70 1.2 V TJ = 25''C, Is = 2.0A, VGs = 0V (3)
VSD Diode Forward Voltage P-Ch - -0.80 -1.2 T: = 25''C, Is = -2.0A, VGS = OV (3
t R R Ti N-Ch - 60 90 ns N-Channel
rr everse emery Ime P-Ch - 54 80 To = 25''C, IF =2.0A, di/dt = 100A/ps
N-Ch - 120 170 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 85 130 " T J = 25°C, IF = -2.0A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
© N-Channel ISD S 4.7A, di/dt S 220A/ps, VDD S V(BR)DSS! Tu S 150''C S Surface mounted on FR-4 board, tS 10sec.
P-Channel Iso S -3.4A, di/dt S -150A/ps, VDD f V(BR)DSSI To S 150°C
© N-Channel Starting To-- 25''C, L = 6.5mH Rs = 259, IAS-- 4.7A.
P-Channel Starting Tu = 25°C, L = 20mH Rs = 259, IAS = -3.4A.
© Pulse width S 300ps; duty cycle S 2%.
