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IRF7343Q
55V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International
TOR Rectifier
PD - 96110A
IRF7343QPBF
. Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperatu re
Lead-Free
Description
These H EXFETD Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additionalfeatures of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
HEXFET© Power MOSFET
:J-CHANNEL MOSFE; N-Ch P-Ch
SI LIL'- 4U DI
G1 rrrz l 7TH D1
VDSS 55V -55V
S2 [rIIrf'- 61D D2
G2 CII" LIE] D2
P-CHANNELMOSFEF RDS(0n) 0.0509 0.1059
Top View
mount SO-8 can dramatically reduce board space and is SO-8
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter N-Channel P-Channel Units
VDs Drain-Source Voltage 55 -55 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7 A
IDM Pulsed Drain Current co 38 -27
PD@TA=25°C Maximum Power Dissipation (S) 2.0 W
PD@TA=70°C Maximum Power Dissipation (9 1.3 W
Ess Single Pulse Avalanche Energy© 72 114 mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 m]
VGs Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt (2) 5.0 -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RNA Maximum Junction-to-Ambient (S) - 62.5 "CM/
1
08/09/10
IRF7343QPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 55 - - Ves = 0V, ID = 250pA
V D -t -S B kd V It
(BR)DSS ram 0 ource rea own o age P-Ch -55 - - V Ves = 0V,lD= -250pA
. N-Ch - 0.059 - Reference to 25''C ID = 1mA
AV IAT B kd V It T . C m t ' '
(BR)DSS J rea own 0 age emp oe Khen P-Ch - 0.054 - V/ C Reference to 25°C, ID = -1mA
N-Ch - 0.043 0.050 VGS = 10V, ID = 4.7A ©
. . . - 0.056 0.065 VGS = 4.5V ID = 3.8A CI)
R St t D -t -S O -R t '
DS(ON) a lo ram D ource n esls ance P-Ch - 0.0950.105 f2 VGS = -10V, ID = -3.4A ©
- 0.150 0.170 Vss = -4.5V, ID = -2.7A ©
N-Ch 1.0 - - Vos = VGs, ID = 250pA
Vegan) Gate Threshold Voltage P-Ch -l .0 - - V Vos = VGs, ID = -250pA
gfs Forward Transconductance 'tg,' :1: - - s "dt : 1100/V IF i4} ©
- . - - DS - - , D - - .
N-Ch - - 2.0 Vos = 55V, VGS = 0V
. - _ P-Ch - - -2.0 VDs = -55V, Vas = 0V
loss Drain to Source Leakage Current N-Ch - - 25 WI Vros = 55V, VGS = OV, T., = 55''C
P-Ch - - -25 Ws = -55V, VGs = 0V, TJ = 55''C
less Gate-to-Source Forward Leakage N-P - - +_100 nA VCs = 120V
Qg Total Gate Charge 't2 I 14, i N-Channel
N-Ch - 2 3 3 4 ID = 4.5A, Vos = 44V, VGS = 10V
Qgs Gate-to-Source Charge P Ch CG 4'5 nC @
N:Ch I Fr, G P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - iG 13 ID = -3.1A, Vos = -44V, VGS = .1ov
tam”) Turn-On Delay Time 2:32 I 'd g N-Channel
. . N-Ch - 3 2 4 8 VDD = 28V, b = 1.0A, Rs = 6.09,
tr Rise Time P-Ch - 1-0 E RD = 289
tdestr) Turn-Off Delay Time 2:52 I i: g P-Channel
VDD = -28V, lo = -1.0A, RG = 6.09,
. N-Ch - 13 20
tr Fall Time P-Ch - 22 32 RD = 289
_ . N-Ch - 740 - N-Channel
Ciss InputCapacitance P-Ch - 690 - VGS = 0V, Vos = 25V, f = 1.0MH2
. N-Ch - 190 - pF
Coss Output Capacitance P-Ch - 210 - P-Channel
Crss Reverse Transfer Capacitance 'lfil1 - 2 - VGS = OV, Vros = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
. . N-Ch - - 2.0
Is Continuous Source Current (Body Diode) P-Ch - - -2.0 A
. N-Ch - - 38
ISM Pulsed Source Current (Body Diode) co P-Ch - - -27
. N-Ch - 0.70 1.2 V TJ = 25''C, Is = 2.0A, VGs = 0V (3)
VSD Diode Forward Voltage P-Ch - -0.80 -1.2 T: = 25''C, Is = -2.0A, VGS = OV (3
t R R Ti N-Ch - 60 90 ns N-Channel
rr everse emery Ime P-Ch - 54 80 To = 25''C, IF =2.0A, di/dt = 100A/ps
N-Ch - 120 170 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 85 130 " T J = 25°C, IF = -2.0A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
© N-Channel la, s 4.7A, di/dt f 220A/ps, VDD S V(BR)DSS! Tu 3 150''C S Surface mounted on FR-4 board, ts: 10sec.
P-Channel ISD S -3.4A, di/dt S -150A/ps, VDD f V(BR)DSS, To S 150°C
© N-Channel Starting To-- 25''C, L = 6.5mH Rs = 259, IAS-- 4.7A.
P-Channel Starting Tu = 25°C, L = 20mH Rs = 259, IAS = -3.4A.
http://www.loa.com/
© Pulse width LC 300ps; duty cycle 3 2%.
