IRF7342 ,-55V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -91859IRF7342®HEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceV = - ..
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IRF7342-IRF7342TR
-55V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD -91859
IRF7342
HEXFET6 Power MOSFET
International
TOR Rectifier
0 Generation V Technology
0 Ultra Low On-Resistance s1m-1- 8mm
o Dual P-Channel Mosfet G1 12 l 7mm VDSS = -55V
0 Surface Mount S BIL 6mm
q Available in Tape & Reel 4 l 5
0 Dynamic dv/dt Rating G2 [I mm RDSW = 0.1059
q Fast Switching .
. . Top View
Description
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modihed through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. 1/Nhththese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -55 V
ID @ TC = 25°C Continuous Drain Current, Ves @ 10V -3.4
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V -2.7 A
IDM Pulsed Drain Current OD -27
Po @Tc = 25°C Power Dissipation 2.0 W
PD @Tc = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage i 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 114
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient) - 62.5 °C/W
1
2/24/99
IRF7342 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.054 - V/°C Reference to 25°C, ID = -1mA
Roam) StaticDrain-to-SourceOn-Resistance - 0.095 O.105 VGS = -10V, ID = -3.4A ©
- 0.150 0.170 VGs = -4.5V, ID = -2.7A Ei)
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VCs, ID = -250PA
gis Forward Transconductance 3.3 - - S Vos = -10V, ID = -3.1A
loss Drain-tchouroeLeakageCurrent _- _- :50 pA V: =" “22$ V2: =" g, T: = 55°C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 26 38 ID = -3.1A
Qgs Gate-to-Source Charge - 3.0 4.5 nC I/os = -44V
di Gate-to-Drain ("Miller") Charge - 8.4 13 V68 = -10V, See Fig. 10 ©
Won) Turn-On Delay Time - 14 22 N/oo = -28V
tr Rise Time - 10 15 ns ID = -1.0A
td(off) Turn-Off Delay Time - 43 64 Rs = 6.09
t, Fall Time - 22 32 RD = 16n, ©
Ciss Input Capacitance - 690 - l/ss = 0V
Coss Output Capacitance - 210 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 86 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous SourceCurrent MOSFET symbol D
(Body Diode) _ _ -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -27 p-njunction diode. s
VSD Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -2.0A, l/ss = 0V ©
trr Reverse Recovery Time - 54 80 ns T: = 25°C, IF = -2.0A
Qrr Reverse RecoveryCharge - 85 130 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junctiontemperature. ( See Fig. 11 )
© Starting T: = 25''C, L = 20mH
Rs = 259, IAS = -3.4A. (See Figure 8)
© ISD s -3.4A, di/dt s -150Nps, V99 3 V(BRmss.
T J f 150°C
GD Pulse width 3 300ps; duty cycle 5 2%.
G) When mounted on 1 inch square copper board, t<10 sec
