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IRF7341ITRPBF
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
PD-95087
International
TOR Rectifier IRF734'llPbF
. Generation v Technology HEXFET® Power MOSFET
o Ultra Low On-Resistance -
. Dual N-Channel Mosfet sIErE1- 833101
q Surface Mount G1 2 l 711391 VDSS = 55V
. Available in Tape & Reel 3 6
q Dynamic dv/dt Rating S2 DJ] E E D2
. Fast Switching G2 533302 RDSWD = 0.0509
Lead-Free Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efMient and reliable device for use
in a wide variety of applications.
The SO-8 has been modifled through a customized
leadframe for enhanced thermal characteristics and SO-8
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 55 V
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 4.7
to @ TC = 70°C Continuous Drain Current, VGS @ 10V 3.8 A
bs, Pulsed Drain Current © 38
Pro @Tc = 25°C Power Dissipation 2.0 W
Pro @Tc = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage 1 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 72
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient® - 62.5 °C/W
1
07/07/06
IRF7341 IPbF International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.059 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-SourceOn-Resistance - 0.043 O.050 VGS = 10V, ID = 4.7A ©
- 0.056 0.065 VGs = 4.5V, ID = 3.8A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VCs, ID = 250pA
gis Forward Transconductance 7.9 - - S Vos = 10V, ID = 4.5A
. - - 2.0 Vos = 55V, VGS = ov
I Drain-to-Source Leaka eCurrent
DSS g - - 25 pA Ws = 55V, Vss = OV, T: = 55°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 24 36 ID = 4.5A
Qgs Gate-to-Source Charge - 2.3 3.4 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 7.0 10 Was = 10V, See Fig. 10 ©
Won) Turn-On Delay Time - 8.3 12 N/oo = 28V
tr Rise Time - 3.2 4.8 ns ID = 1.0A
td(off) Turn-Off Delay Time - 32 48 Rs = 6.09
t, Fall Time - 13 20 RD = 169. (4)
Ciss Input Capacitance - 740 - l/ss = 0V
Coss Output Capacitance - 190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 71 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.0 A showing the
ISM Pulsed Source Current 38 integral reverse G
(Body Diode) OD - - p-njunction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 2.0A, l/ss = 0V ©
trr Reverse Recovery Time - 60 90 ns T: = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 120 170 nC di/dt = -100A/ps ©
Notes:
(D Repetitive rating; pulse width limited by
max.junctiontemperature. ( See fig. 11 )
© Starting T: = 25''C, L = 6.5mH
Rs = 259, IAS = 4.7A. (See Figure 8)
© ISD S 4.7A, di/dt S 220/Ups, VDD S V(BR)DSS,
T Js 150°C
GD Pulse width f 300ps; duty cycle S 2%.
© When mounted on 1 inch square copper board, t<10 sec
