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IRF7338-IRF7338TR
12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
:rciRRectifier
94372C
IRF7338
HEXFET® Power MOSFET
q Ultra Low On-Resistance N-CHANNELMOSFET N-Ch P-Ch
q Dual N and P Channel MOSFET s1mrl- l 833101
o Surface Mount G1 3:2 7:13 m
. . VDSS 12V -12V
o Available in Tape & Reel S2 BIL 6:3: D2
G2 En:4 l I-nr D2
P-CHpt0lELMOSFET RDSW) 0.034Q 0.1509
Top View
Description
These N and P channel MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power SO-8
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
Vos Drain-to-Source Voltage 12 -12
ID @ TA = 25°C Continuous Drain Current, Ves @ 4.5V 6.3 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.2 -2.5
IDM Pulsed Drain Current (D 26 -13
Pro @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
l/cs Gate-to-Source Voltage 112 © i 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rea, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 62.5 ''CAN
1
6/2/03
IRF7338
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. - - N-Ch 12 - - VGs = 0V, ID = 250pA
V(BR)DSS Drain to Source Breakdown Voltage P-Ch -12 - - v VGs = 0V, ID = -250PA
. N-Ch - 0.01 - a Reference to 25°C, ID = 1mA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient 7P-Ch = -0_01 = V/ C Reference to 25''C, ID = -l mA
N-Ch - - 0.034 VGS = 4.5V, ID = 6.0A ©
. ' . - - 0.060 Vss = 3.0V, lo = 2.0A ©
R St t D -t M O -R t
DS(ON) a IC ram 0 ource n eSIS ance P-Ch - - 0.150 Q VGS = -4.5V, ID = -2.9A ©
- - 0.200 VGS = -2.7V, ID = -1.5A ©
N-Ch 0.6 - 1.5 Ws = I/ss, ID = 250PA
VGS(th) Gate Threshold Voltage P-Ch -0.40 - -l .0 v 1/ros = VGs, ID = -250PA
N-Ch 9.2 - - Vros = 6.0V, lo = 6.0A ©
gfs Forward Transconductance P-Ch 3.5 - - s Vros = AifN, lo = -1.5A ©
N-Ch - - 20 Vos = 9.6V, Was = 0V
. - - P-Ch - - -1.0 Ws = -9.6 V, VGS = 0V
loss Drain to Source Leakage Current N-Ch - - 50 pA VDs = 9.6V, VGS = 0V, Tu = 55°C
P-Ch - - -25 Ws = -9.6V, VGS = 0V, Tu = 55°C
less Gate-to-Source Forward Leakage N-Ch - - i100 nA VGS = i 12V
P-Ch - - i100 VGS = * 8.0V
Qg Total Gate Charge (tfill I I 'if, N-Channel
N-Ch - - 19 nC lo = 6.0A, Vos = 6.0V, VGS = 4.5V
Qgs Gate-to-Source Charge .
P-Ch - - 1.3
. . N-Ch - - 3 9 P-Channel
di Gate-to-Drain ("Miller") Charge P Ch 16 lo = -2SA, Vos = -9.6V, VGS = -4.5 V
tum) Turn-On Delay Time SE: I gg I N-Channel
. ' N-Ch - Fi, - VDD = 6.0V, ID =1.0A,RG = 6.09,
tr Rise Time P-Ch - 13 - ns VGS = 4.5V
. N-Ch - 26 - ©
td(off) Turn-Off Delay Time P-Ch - 27 - P-Channel
. N-Ch - 34 - Vroro = -6.0V, ID = -2.9A, Rs = 6.09,
tf Fall Time P-Ch - 25 - VGs = -4.5V
Ciss Input Capacitance 't2 - :38 - N-Channel
N-Ch - 340 - pF N/ss = 0V, Vros = 9.0V, f =1.0MHz
Coss Output Ca pacitance - - -
P-Ch - 80 -
N-Ch - 110 - P-Channel
Crss Reverse Transfer Capacitance VGS = 0V, VDS = -9.OV, f = 1.0KHz
P-Ch - 58 -
Source-Drain Ratings and Characteristics
Parameter Min Typ Max. Units Conditions
. . N-Ch - - 6.3
ls Continuous Source Current (Body Diode) P-Ch - - -3.0 A
N-Ch - - 26
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -13
N-Ch - - 1.3 V TJ = 25°C, ls = 1.7A, VGS = 0v ©
Vso Diode Forward Voltage P-Ch - - -1.2 TJ = 25°C, ls = -2.9A, VGS = ON/ ©
N-Ch - 51 76 ns N-Channel
trr Reverse Recovery Time P-Ch - 37 56 TJ = 25°C, IF = 1.7A, di/dt = 100Alus
N-Ch - 43 64 nC P-Channel ©
Qrr Reverse Recovery Charge P-Ch - 20 30 Tu = 25''C, IF = -2SA, di/dt = -100A/us
Notes:
G) Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board.
max. junction temperature. © The N-channel MOSFET can withstand 15V VGS max
C) Pulse width 3 400ps; duty cycle S 2%. tor up to 24 hours over the lite of the device.
2
