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IRF7331TRPBF
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95266A
International
TOR Rectifier IRF7331PbF
H EXFET® Power MOSFET
0 Ultra Low On-Resistance VDss RDS(on) max (mg) k,
q g” N'Cgannte' MOSFET 20V 30@Vss = 4.5V 7.0A
0 U ace oun
. . 45@V = 2.5V 5.6A
q Available In Tape & Reel GS
0 Lead-Free
Description l 8
These N-Channel HEXFET2 power MOSFETs from 51L l Mm
International Rectifier utilize advanced processing (311:2 7313 D1
techniques to achieve the extremely lowon-resistance mf- 6:11 D
per silicon area. This benefit provides the designer S2 l , 2
with an extremely efficient device for use in battery G2 33:4 5311 D2
and load management applications.
Top View SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, Ves © 4.5V 7.0
ID @ TA-- 70°C Continuous Drain Current, l/tss @ 4.5V 5.5 A
IDM Pulsed Drain Current (D 28
Po @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation© 1.3
Linear Derating Factor 16 mW/°C
Vas Gate-to-Source Voltage i 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
FU. Junction-to-Drain Lead - 42
RNA Junction-to-Ambient © - 62.5 "C/W
1
07/09/08
IRF7331PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.013 - V/°C Reference to 25°C, ID = 1 mA
Roam) Static Drain-to-Source On-Resistance - - 30 mn Vss = 4.5V, lo = 7.OA ©
- - 45 l/cis = 2.5V, ID = 5.6A ©
VSS(th) Gate Threshold Voltage 0.6 - 1.2 V VDs = Vss, ID = 250pA
gfs Forward Transconductance 14 - - S VDs = 10V, ID = 7.0A
. - - 1.0 VDs = 16V, l/tas = ov
I Drain-to-Source Leaka e Current
DSS g - - 25 PA Vos = 16V, l/tas = OV, TI, = 70°C
I Gate-to-Source Forward Leakage - - 100 n A Vas = 12V
GSS Gate-to-Source Reverse Leakage - - -100 Vas = -12V
% Total Gate Charge - 13 20 ID = 7.0A
Qgs Gate-to-Source Charge - 3.7 - nC Ihos = 10V
di Gate-to-Drain ("Miller") Charge - 2.1 - l/ss = 4.5V
td(on) Turn-On Delay Time - 7.6 - VDD = 10V ©
t, Rise Time - 22 - ns ID = 1.0A
td(oti) Turn-Off Delay Time - 110 - Rs = 539
tt Fall Time - 50 - Vas = 4.5V
Ciss Input Capacitance - 1340 - Vas = 0V
Coss Output Capacitance - 170 - pF Vos = 16V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 0 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 28 integral reverse G
(Body Diode) CD - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, Is = 2.0A, Vas = 0V ©
tr, Reverse Recovery Time - 31 47 ns To = 25°C, IF = 2.0A
Qrr Reverse Recovery Charge - 15 23 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
