IRF7328 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -94000IRF7328®HEXFET Power MOSFET● Trench TechnologyV R max IDSS DS(on) D● Ultra Low On-Resist ..
IRF7328TR ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -94000IRF7328®HEXFET Power MOSFET● Trench TechnologyV R max IDSS DS(on) D● Ultra Low On-Resist ..
IRF7328TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 95196AIRF7328PbF®HEXFET Power MOSFET
IRF7328-IRF7328TR
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD -94000
International
TOR Rectifier IRF7328
HEXFET© Power MOSFET
o Trench Technology
. Ultra Low On-Resistance VDSS Riostom max ID
. Dual P-Channel MOSFET -30V 21mn@VGs = -10V -8.0A
. Available in Tape & Reel 32mQ@VGS = -4_5v -6.8A
Description
New trench HEXFET© Power MOSFETs from 3113:
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This beneht, combined with the S2 [I
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer G2 CTE
with an extremely ethcient and reliable device for use 30-8
in battery and load management applications. Top View
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, Ves @ -10V -8.0
In @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A
IDM Pulsed Drain CurrentCD -32
Pro @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 16 mW/°C
Was Gate-to-Source Voltage i 20 V
T J , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient © 62.5 'C/W
1
10/04/00
IRF7328 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.018 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 17 21 mn VGS = -10V, ID = -8.0A ©
- 26.8 32 VGS = -4.5V, ID = -6.8A ©
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 12 - - S Vos = -10V, ID = -8.0A
loss Drain-to-Source Leakage Current - - -15 pA N/ns = -24V, VGS = 0V (2
- - -25 V93 = -24V, Vss = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 52 78 ID = -8.0A
Qgs Gate-to-Source Charge - 9.8 - nC Vros = -151/
di Gate-to-Drain ("Miller") Charge - 8.3 - VGS = -10V
td(on) Turn-On Delay Time - 13 20 Va, = -15V, VGS = -10.0V
tr Rise Time - 15 23 ns ID = -1.0A
td(off) Turn-Off Delay Time - 198 297 Rs = 6.09
tf Fall Time - 98 147 RD = 159 ©
Ciss Input Capacitance - 2675 - VGs = 0V
Coss Output Capacitance - 409 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 262 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current 32 A integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGs = 0V ©
trr Reverse Recovery Time - 37 56 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 36 54 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts 10sec.
max. junction temperature.
© Pulse width I 400ps; duty cycle 3 2%.
2
