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Parameter Min. Typ. Max. Uni ..
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IRF7326D2-IRF7326D2TR
-30V FETKY
International PD-93763
TOR Rectifier IRF7326D2
FETKYTM MOSFET / Schottky Diode
Co-packaged HEXFET6 Power MOSFET
and Schottky Diode A
Ideal For Buck Regulator Applications A
P-Channel HEXFET
Low VF Schottky Rectifier 4 l
5 311 D
Generation 5 Technology Schottky W = 0.52V
SO-8 Footprint
l, n $3ij
A L,,,-,),',",',',
VDSS = -30V
RDS(on) = 0.109
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifer's low forward drop Schottky rectihers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modihed through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current Cr) -3.6 A
ID @ TA = 70°C -2.9
IDM Pulsed Drain Current co -29
Pro @TA = 25°C Power Dissipation © 2.0 W
Pro @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt 2 -5.0 V/ns
Tv, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
' l Junction-to-Ambient (g) 62.5 ''C/W
Notes:
(I) Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
© ISD S -1.8A, di/dt S -90A/ps, VDD S 1/(BRpss, T: S150°C
© Pulse width S 300ps; duty cycle 3 2%
co Surface mounted on FR-4 board, ts 10sec.
1
8/19/99
IRF7326D2 International
ISER Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V l/ss = 0V, ID = -250pA
RDSm Static Drain-to-Source On-Resistance - 0.073 0.10 n VGS = -10V, ID = -1.8A ©
- 0.13 0.16 VGs= -4.5V, ko=-1.5A©
Vesoh) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
gts Forward Transconductance 2.5 - - S Vos = -24V, ID = -1.8A
loss Drain-to-Source Leakage Current - - -1.0 Vos = -24V, VGS = 0V
- - -25 pA Vos = -24V, Vas = 0v, TJ = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - -100 VGs = 20V
09 Total Gate Charge - - 25 ID = -1.8A
Qgs Gate-to-Source Charge - - 2.9 nC VDS = -24V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGS = -10V (see Figure 6) ©
td(on) Turn-On Delay Time - 11 - VDD = -15V
tr Rise Time - 17 - ns ID = -1.8A
tam) Turn-Off Delay Time - 25 - Rs = 6.09
tf Fall Time - 18 - RD = 8.29 ©
Ciss Input Capacitance - 440 - N/ss = 0V
Coss Output Capacitance - 200 - pF Vros = -25V
Crss Reverse Transfer Capacitance - 93 - f = 1.0MHz (see Figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current (Body Diode - - -2.5 A
ISM Pulsed Source Current (Body Diode) - - -29
V59 Body Diode Forward Voltage - - -1.0 V TJ = 25°C, Is = -1.8A, VGs = 0V
trr Reverse Recovery Time (Body Diode) - 53 80 ns TJ = 25°C, IF = -1.8A
Qrr Reverse Recovery Charge - 66 99 nC di/dt = 100Alps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 A 50% Duty Cycle. Rectangular Wave, Tc = 25°C
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or 3ps Rect. pulse Following any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward voltage drop 0.57 If = 3.0, T] = 25°C
0.77 V If= 6.0, Tj = 25°C
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C
Irm Max. Reverse Leakage current 0.30 m A Vr = 30V T] = 25°C
37 T] = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/ps Rated Vr
( HEXFET is the reg. TM tor International Rectifier Power MOSFET's )
