IRF7324D1TR ,-20V FETKYapplications. Generation 5 HEXFETs utilize advanced processing techniquesto achieve extremely low ..
IRF7324D1TR ,-20V FETKYPD- 91789BIRF7324D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET® Power18A KMOSFET and Schott ..
IRF7324D1TR ,-20V FETKYApplications A K Generation V Technology3 6S DR = 0.27ΩDS(on) SO-8 Footprint45G DSchottky Vf = 0. ..
IRF7324D1TRPBF ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7324TR ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -93799AIRF7324®HEXFET Power MOSFET● Trench Technology● Ultra Low On-Resistance 1 8S1 D1V = -20 ..
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ISD4004-08MP , Single-Chip Voice Record/Playback Devices 8-, 10-, 12-, and 16-Minute Durations
IRF7324D1-IRF7324D1 TR-IRF7324D1TR
-20V FETKY
International
TOR Rectifier
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode
Ideal forM
0 Generation
obile Phone Applications
V Technology
0 SO-8 Footprint
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques
to achieve extremely low on-resistance per silicon area.
technology with International Rectmer's low forward drop Schottky rectiflers
results in an extremely efficient device suitable for use in a wide variety of
portableelectroni
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave
cs applications.
soldering techniques.
PD- 91789B
IRF7324D1
FETKW"MOSFET / Schottky Diode
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TopView
VDSS = -20V
RDS(on) = 0.279
Schottky Vf = 0.39V
Combining this
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -20 V
VGS Gate-to-Source Voltage , 12
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.2
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V -1.8 A
IDM Pulsed Drain Current OD -22
PD @TA = 25''C Power Dissipation © 2.0 w
Pro @TA = 70°C Power Dissipation © 1.3
dV/dt Peak Diode Recovery © -0.74 V/ns
Linear Derating Factor 16 mW/°C
T J Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s _ 20 mm
ROJA Junction-to-Ambient ©S - 62.5
Notes co through s are on page 8
1
10/18/04
http://www.datas
heetcataloa.Com/
IRF7324D1
nternaticnal
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
RDswn) Static Drain-to-Source On-Resistance - 0.155 0.270 Q VGS = -4.5V, ID = -1.2A ©
- 0.260 0.400 l/GS = -2.7V, ID = -0.6A ©
Vegan) Gate Threshold Voltage -0.70 - - V Vos = Vas, ID = -250pA
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, V65 = 0V
- - -25 Vos = -16V, VGS = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = -12V
Gate-to-Source Reverse Leakage - - -100 VGS = 12V
gfs Forward Transconductance 2.4 - S Vos = -16V, ID = -2.2A
Q, Total Gate Charge - 5.2 7.8 ID = -2.2A
Qgs Gate-to-Source Charge - 0.88 - nC Vas = -4.51/
di Gate-to-Drain Charge - 2.5 - VDD = -16V
td(on) Turn-On Delay Time - 10 - VDD = -10V, Vss = -4.51/ ©
t, Rise Time - 12 - ID = -2.2A
1mm Turn-Off Delay Time - 11 - ns Rs = 6.09
t, Fall Time - 7.6 - RD = 4.59
Ciss Input Capacitance - 260 - VGS = 0V
(hss Output Capacitance - 140 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
Parameter Min Typ Max. Units Conditions
ls Continuous Source Current - - -2.2
ISM Pulsed Source Current - - -22
V30 Diode Forward Voltage - - -1.2 V To = 25°C, ls = -2.2A, VGS = 0V OD
trr Reverse Recovery Time - 26 39 ns To = 25°C, IF = -2.2A, I/on = -10V
Q, Reverse Recovery Charge - 24 36 nC di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
Inav) Max. Average Forward current 1.7 50% Duty Cycle Rectangular Wave, TA = 25''C [
1.2 A TA = 70°C
ISM MaX.Peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. Pulse Following any rated
Surge Current 11 10ms sine or 6ms Rect. Pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward Voltage Drop 0.50 V IF = 1.0A, TJ = 25°C
0.62 V = 2.0A, TJ = 25°C
0.39 V =1.0A,TJ =125°C
0.57 V = 2.0A, TJ =125°C
IRM Max. Reverse Leakage Current 0.05 mA VR = 20V TJ = 25°C
10 TJ = 125°C
Ct Max. Junction Capacitance 92 pF VR = 5Vdc (100kHz to 1MHz) 25°C
dV/dt Max. Voltage Rate of Charge 3600 V/ps Rated VR
2
