IRF7324 ,-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD -93799AIRF7324®HEXFET Power MOSFET● Trench Technology● Ultra Low On-Resistance 1 8S1 D1V = -20 ..
IRF7324D1 ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7324D1 TR ,-20V FETKYapplications.The SO-8 has been modified through a customized leadframe for enhancedthermal characte ..
IRF7324D1TR ,-20V FETKYapplications. Generation 5 HEXFETs utilize advanced processing techniquesto achieve extremely low ..
IRF7324D1TR ,-20V FETKYPD- 91789BIRF7324D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET® Power18A KMOSFET and Schott ..
IRF7324D1TR ,-20V FETKYApplications A K Generation V Technology3 6S DR = 0.27ΩDS(on) SO-8 Footprint45G DSchottky Vf = 0. ..
ISD4002-240SI , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4003 , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4003-04ME , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4003-04MED , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4003-04MEI , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
ISD4003-05MP , Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations
IRF7324-IRF7324TR
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
PD -93799A
International
TOR Rectifier IRF7324
HEXFET© Power MOSFET
o Trench Technology
q Ultra Low On-Resistance Sl m}
q Dual P-Channel MOSFET G1 VDSS = -20V
q Low Profile (<1.1mm)
q Available in Tape & Reel S2 EU
q 2.5V Rated G2 RDSW) = 0.0189
. . Top View
Description
Newtrench HEXFET® PowerMOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined withthe ruggedized device design
that HEXFET power MOSFETs are well known for, b': .
provides the designer with an extremely efficient and J" 7 _ 5
reliable device for use in battery and load management ss/li)'"'''"
applications. _
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -9.0
In @ TA = 70°C Continuous Drain Current, l/ss @ -4.5V -7.1 A
IDM Pulsed Drain CurrentCD -71
Pro @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage i 12 V
T J , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient (E 62.5 °C/W
1
6/26/00
IRF7324 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.02 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - - O.018 Q VGS = -4.5V, ID = -9.0A ©
- - 0.026 VGS = -2.5V, ID = -7.7A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 19 - - S Vos = -10V, ID = -9.0A
loss Drain-to-Source Leakage Current - - -1 .0 pA N/ns = -16V, VGS = 0V 0
- - -25 V93 = -16V, Vss = 0V, Tu = 125 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 42 63 ID = -9.0A
Qgs Gate-to-Source Charge - 7.1 11 nC Vros = -161/
di Gate-to-Drain ("Miller") Charge - 12 18 VGS = -5.0V
td(on) Turn-On Delay Time - 17 - Va, = -10V
tr Rise Time - 36 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 170 - Rs = 6.09
tf Fall Time - 190 - RD = lon ©
Ciss Input Capacitance - 2940 - VGs = 0V
Coss Output Capacitance - 630 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 420 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current - - -71 A integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGs = 0V ©
trr Reverse Recovery Time - 180 270 ns Tu = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 300 450 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width I 300ps; duty cycle 3 2%.
© Surface mounted on FR-4 board, ts 10sec.
2
