IRF7322D1 ,-20V FETKYapplications.The SO-8 has been modified through a customized leadframe forenhanced thermal characte ..
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ISD4002-180S , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
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ISD4002-240S , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
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IRF7322D1-IRF7322D1TR
-20V FETKY
PD- 91705A
International
TOR Rectifier IRF7322D'l
FETKY"' MOSFET / Schottky Diode
Co-packaged HEXFET6 Power MOSFET
and Schottky Diode A
Ideal For Buck Regulator Applications A
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Q " LE: Wss=-20V
RDS(on) = 0.0589
Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifler's low forward drop Schottky rectifers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized Ieadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -5.3 A
ID @ TA = 70°C -4.3
IDM Pulsed Drain Current (D -43
Pro @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
To,TsTs Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
ReJA l Junction-to-Ambient co 62.5 °C/W
Notes:
C) Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
2 Iso S -2.9A, di/dt S -77A/ps, VDD S V(BR)DSS! To f 150°C
co Pulse width S 300ps; duty cycle f 2%
@ Surface mounted on FR-4 board, ts 10sec.
1
3/17/99
IRF7322D1 International
TOR Rectifier
MOSFET Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V l/ss = 0V, ID = -250HA
Rosom Static Drain-to-Source On-Resistance - 0.049 0.062 n VGs = M.5V, ID = -2.9A ©
- 0.082 0.098 VGS = -2.7V, ID = -1.5A ©
VGS(th) Gate Threshold Voltage -0.70 - - V VDs = VGs, ID = -250pA
gfs Forward Transconductance - 5.9 - S VDS = -10V, ID = -1.5A
loss Drain-to-Source Leakage Current - - -1.0 Vos = -16V, Ves = 0V
- - -25 PA Vos = -16V, Vss = 0v, T: = 55°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = -12.0V
Gate-to-Source Reverse Leakage - - -100 VGs = 12.0V
Qg Total Gate Charge - 19 29 ID = -2.9A
Qgs Gate-to-Source Charge - 4.0 6.1 nC VDS = -16V
di Gate-to-Drain ("Miller") Charge - 7.7 12 VGS = -4.5V (see figure 6) ©
1d(on) Turn-On Delay Time - 15 22 VDD = -10V
tr Rise Time - 40 60 ns ID = -2.9A
tum) Turn-Off Delay Time - 42 63 Rs = 6.09
if Fall Time - 49 73 RD = 3.49 ©
Ciss Input Capacitance - 780 - Vss = 0V
Coss Output Capacitance - 470 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current (Body Diode - - -2.5 A
ISM Pulsed Source Current (Body Diode) - - -21
I/so Body Diode Forward Voltage - - -1.2 V Tu = 25°C, IS = -2.9A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 47 71 ns Tu = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge - 49 73 nC di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
lnav) Max. Average Forward Current 2.7 A 50% Duty Cycle. Rectangular Wave, TA = 25°C
2 See Fig. 14 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5ps sine or 3ps Rect. pulse Following any rated
Surge current 11 A 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. FonNard voltage drop 0.50 IF = 1.0A, T, = 25''C
0.62 V IF = 2.0A, T: = 25°C
0.39 IF = 1.0A, T: = 125°C
0.57 IF = 2.0A, T, =125°C.
IRM Max. Reverse Leakage current 0.02 m A VR = 20V T: = 25°C
8 To = 125°C
c, Max. Junction Capacitance 92 pF VR = 5Vdc( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ us Rated VR
2
