IRF7321D2TRPBF ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7322D1 ,-20V FETKYapplications.The SO-8 has been modified through a customized leadframe forenhanced thermal characte ..
IRF7322D1TR ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7322D1TRPBF ,-20V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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ISD4002-180E , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-180P , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-180S , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-240E , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-240S , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
ISD4002-240SI , Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
IRF7321D2TRPBF
-30V FETKY
PD-95297
International
IEER Rectifier IRF7321 D2PbF
FETKYTMMOSFET & Schottky Diode
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode 1 , 8
0 Ideal For Buck Regulator Applications A [1:2 7113K VDSS = -30V
. P-Channel HEXFET© A D: *3]: K
0 Low VF Schottky Rectifier s EL 6-ELL] D RDS(on) = 0.0629
q Generation 5 Technology G ',,C,c,r'4'r,ijiiil(r',,C,," D
. SO-8 Footprint Schottky Vf=0.52V
o Lead-Free Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offerthedesigner an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, Vas @ -10V -4.7 A
In @ TA = 70°C -3.8
IDM Pulsed Drain Current C) -38
Pro @TA = 25°C Power Dissipation 2.0 W
Pro @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
l/ss Gate-to-Source Voltage A 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Tsms Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
ReJA l Junction-to-Ambient (ii) 62.5 °CNV
Notes:
co Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
© ISDS -2.9A, di/dt S -77A/ps, VDD S (srvoss, Tu S 150°C
(3) Pulse width 3 300ps - duty cycle S 2%
© Surface mounted on FR-4 board, ts 10sec.
WWW. i rf.com
10/12/04
IRF7321D2PbF International
TOR Rectifier
MOSFET Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DS$ Drain-to-Source Breakdown Voltage -30 - - V Vias = 0V, ID = -250pA
RDsm) Static Drain-to-Source On-Resistance - O.042 O.062 Q Vias = -1OV, ID = -4.9A ©
- 0.076 0.098 Vss = -4.5v, ID = -3.6A ©
VGS(th) Gate Threshold Voltage -1.0 - - V I/rss = Vas, ID = -250uA
gis Forward Transconductance - 7.7 - S l/os = -15V, ID = -4.9A
loss Drain-to-Source Leakage Current _ - -1.0 PA I/os = -24V, VGS = 0V
- - -25 I/os = -24V, Vss = 0V, To = 55°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = -20V
Gate-to-Source Reverse Leakage - - -100 Vias = 20V
09 Total Gate Charge - 23 34 ID = -4.9A
Qgs Gate-to-Source Charge - 3.8 5.7 no Vos = -15V
di Gate-to-Drain ("Miller") Charge - 5.9 8.9 Vas = -1OV, See Fig. 6 ©
tsion) Turn-On Delay Time - 13 19 VDD = -15V
tr Rise Time - 13 20 ns ID = -1.0A
ksirsti) Turn-Off Delay Time - 34 51 Rs = 6.09
tf Fall Time - 32 48 Ro = 159, ©
Ciss Input Capacitance - 710 - Vias = 0V
Coss Output Capacitance - 380 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode - - -2.5 A
ISM Pulsed Source Current (Body Diode) - - -30
VSD Body Diode Forward Voltage - -0.78 -1.0 V TJ = 25°C, Is = -1.7A, N/ss = 0V
trr Reverse Recovery Time (Body Diode) - 44 66 ns To = 25°C, IF = -1.7A
G, Reverse Recovery Charge - 42 63 nC di/dt = 100A/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 3.2 A 50% Duty Cycle. Rectangular Wave, Tc = 25°C
2.0 See Fig.14 Tc = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or Sus Rect. pulse Following any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward voltage drop 0.57 If = 3.0, T] = 25°C
0.77 If = 6.0, Tl = 25°C
0.52 V If = 3.0, T] = 125°C
0.79 If = 6.0, T] = 125°C
Irm Max. Reverse Leakage current 0.30 m A Vr = 30V T] = 25°C
37 T] = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/ps Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's)
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