IRF7319TRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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IRF7321D2TR ,-30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7319TRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 95267
International
Tart, Rectifier RF7319PbF
HEXFET® Power MOSFET
o GenerationVTechnology N-CHANNELMOSFET
0 Ultra Low On-Resistance s1nr1- BJJJD1 N-Ch P-Ch
o Dual N and P Channel MOSFET 61W: 7TH D1
0 Surface Mount 3 6 Ihoss 30V -30V
0 Fully Avalanche Rated S2 EE_ l E D2
. Lead-Free G2 3:4 5:1: D2
P-CHANNELMOSFET RDS(on) 00299 00589
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, SO-8
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage Vss i 20
Continuous Drain Currents TA =25 C In 6.5 -4.9
TA = 70°C 5.2 -3.9 A
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) ls 2.5 -2.5
. . . . TA =25°C 2.0
Maximum Power Dissipation s TA = 70''C PD 1.3 W
Single Pulse Avalanche Energy EAS 82 140 m]
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 m]
Peak Diode Recovery dv/dt © dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TU,TSTG -55 to + 150 (
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient © ReJA 62.5 'CIW
8/17/04
IRF7319PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 2:3: 3% I I V te : tf,' 13:2550015A
. N-Ch - 0.022 - Reference to 25''C ID = 1mA
AV IAT B kd V It T . C m t ' '
(BR)DSS J rea own 0 age emp oe Khen P-Ch - 0.022 - V/ C Reference to 25°C, ID = -1mA
N-Ch - 0.023 0.029 Vss = 10V, ID = 5.8A ©
RDS(ON) Static Drain-to-Source On-Resistance P-Ch I 3'33: 83;: Q t: : :23; II: : $179ng
- 0.076 0.098 Vss = -4.5V, ID = -3.6A ©
N-Ch 1.0 - - Vos = VGS, ID = 250pA
Vegan) Gate Threshold Voltage P-Ch -l .0 - - V Vos = VGS, ID = -250pA
N-Ch - 14 - Vos =15V,lo = 5.8A ©
gfs Forward Transconductance P-Ch - 7.7 - s Vos = -15V, ID = -4.9A ©
N-Ch - - 1.0 Vos = 24V, VGS = 0V
. P-Ch - - -1.0 VDs = -24V, Vas = 0V
I D -t -S L k C t
DSS ram 0 ource ea age urren N-Ch - - 25 pA Vros = 24V, VGS = OV, T., = 55''C
P-Ch - - -25 Ws = -24V, VGs = 0V, TJ = 55''C
less Gate-to-Source Forward Leakage N-P - - +_100 nA VCs = 120V
Qg Total Gate Charge 't2 I fi 3 N-Channel
N-Ch 2.6 3.9 |D=5.8A. Vros=15V,Vcs= 10V
Qgs Gate-to-Source Charge P-Ch - 3-8 5'7 nC @
N:Ch I 6-4 9-6 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 5'9 [G ID = -4.9A, Vos = -15V, VGS = .1ov
tam”) Turn-On Delay Time 2:32 I 81‘; g N-Channel
. . N-Ch - 8 9 13 VDD =15V,b =1.0A,RG = 6.on,
tr Rise Time P-Ch - E 20 RD = 159
tdestr) Turn-Off Delay Time 2:52 I :3 :3 P-Channel
N-Ch - 17 26 vDD = -15v, ID = -1.0A, RG = 6.09,
tr Fall Time P-Ch - 32 48 RD = 159
_ . N-Ch - 650 - N-Channel
Ciss Input Capacitance P-Ch - 710 - VCs = ov, Vos = 25V, f = 1.0MH2
. N-Ch - 320 - pF
Cass Output Capacitance P-Ch - 380 - P-Channel
Crss Reverse TransferCapacitance 'lfil1 - 1:3 - VGS = OV, Vros = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. . N-Ch - - 2.5
Is Continuous Source Current (Body Diode) P-Ch - - -2.5 A
. N-Ch - - 30
ISM Pulsed Source Current (Body Diode) co P-Ch - - -30
. N-Ch - 0.78 1.0 V TJ = 25''C, Is = 1.7A, VGs = 0V (3)
VSD Diode Forward Voltage P-Ch - -0.78 -1.0 T: = 25''C, Is = M.7A, VGS = OV (3
. N-Ch - 45 68 N-Channel
trr Reverse Recovery Time P-Ch - 44 66 To = 25''C, IF =1.7A, di/dt = 100A/ps
N-Ch - 58 87 P-Channel ©
Q" Reverse Recovery Charge P-Ch - 42 63 " T J = 25°C, IF = -1.7A, di/dt = 100A/ps
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 22 )
© N-Channel ISDS 4.0A, di/dt S 74A/ps, VDD S V(BR)DSSy Tu S 150°C S Surface mounted on FR-4 board, t S 10sec.
P-Channel ISD S -2.8A, di/dt S 150A/ps, VDD S V(BR)Dss, Tu S 150°C
© N-Channel Starting Tu = 25°C, L =10mH Rs = 259, IAS-- 4.0A. (See Figure 12)
P-Channel Starting Tu = 25°C, L = 35mH Rs = 259, IAS = -2.8A.
