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IRF7317-IRF7317TR
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 9.1568B
International
TOR Rectifier PRELIMINARY IRF731 7
HEXFET® Power MOSFET
0 Generation V Technology
o Ultra Low On-Resistance Sl DIEMNNELWSFEJDI D1 N-Ch P-Ch
0 Dual N and P Channel MOSFET G1 0L2 i~ MW
0 Surface Mount 3 6 Voss 20V -20V
0 Fully Avalanche Rated S LIL"- c11, 02
G2 'nr' 5a: D2
. . P-CHANNELMOSFET RDS(on) 0.029n 00589
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
beneht, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage Vros 20 -20 V
Gate-Source Voltage Vss 1 12
. . T =25°C 6.6 -5.3
c t D C t6) A
on anOUS ran urren TA-- 70°C ID 5.3 M.3 A
Pulsed Drain Current IDM 26 -21
Continuous Source Current (Diode Conduction) b 2.5 -2.5
. . . . TA= 25°C 2.0
Maximum Power Dissipation s TA-- 70°C PD 1.3 W
Single Pulse Avalanche Energy EPs 100 150 ml
Avalanche Current IAR 4.1 -2.9 A
Repetitive Avalanche Energy EAR 0.20 m]
Peak Diode Recovery dv/dt © dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range T J,Tssrs -55 to + 150 'C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient G) RQJA 62.5 "C/W
12/9/97
IRF73'17
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 20 - - VGS = 0V, ID = 250PA
V D - - B kd V I
(smoss ram to Source rea own otage P-Ch -20 - - V VGS = 0V, ID = -250HA
. N-Ch - 0.027 - CI Reference to 25''C, ID = 1mA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient P-Ch - 0.031 - V/ C Reference to 25°C, ID = - 1m A
N Ch - 0.023 0.029 Was = 4.5V, ID = 6.0A ©
. . . - - 0.030 0.046 Ves = 2.7V, ID = 5.2A ©
R Stat D a -t -S O -R s sta
DS(ON) IC r In 0 Durce n e I nce P-Ch - 0.049 0.058 fl Vss = -4.5v, ID = -2.9A ©
- 0.082 0.098 Vss = -2.7V, ID = -1.5A ©
N-Ch 0.7 - - Ws = VGS, ID = 250pA
V G Th h Id V It
GS(th) ate res o 0 age P-Ch -0.7 - - V Ws = VGS, ID = -250PA
N-Ch - - kbs = 10V, ID = 6.0A ©
gfs Forward Transconductance P-Ch - 5.9 - s Ws = -10V, ID = -1.5A ©
N-Ch - - 1.0 Ws = 16V, VGs = 0V
. P-Ch - - -1.0 Ws = -16V, l/ss = 0V
I D - - L k
DSS raIn to Source ea age Current N-Ch - - 5.0 pA Ws = 16V, I/ss = 0V, To = 55°C
P-Ch - - -25 Vros = -16V, Vss = OV, To = 55''C
less Gate-to-Source Forward Leakage N-P - - 1100 nA VGs = t12V
Qg Total Gate Charge 't2 I I' g N-Channel
N-Ch - 2 2 3 3 ID = 6.0A, N/os = 10v. Vss = 4.5V
Qgs Gate-to-Source Charge P Ch LT, ir'; nC ©
N-Ch - 6-2 9'3 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 7‘7 1'2 ID = -2.9A, VDs = -16V, l/GS = M.5V
tum") Turn-On Delay Time ',t2 I 8151 g N-Channel
. . N-Ch - 17 25 l/DD = 10V, ID = 1.0A, Rs = 6.00,
t, Rise Time P-Ch - 40 60 RD = lon
tam") Turn-Off Delay Time le,' I 3: ir, P-Channel
vDD = -10V, ID = -2SA, Rs = 6.09,
. N-Ch - 31 47
tf Fall Time P-Ch - 49 73 RD = 3.49
. N-Ch - 900 - N-Channel
C, I tC t
ISS npu apac' ance P-Ch - 780 - VGS = 0v, I/os = 15V, f = 1.0MHZ
Coss Output Capacitance ',t2 I R] I pF P-Chan nel
Crss Reverse Transfer Capacitance le,' - fe - VGS = 0V, Vros = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
. . N-Ch - - 2.5
Is Continuous Source Current (Body Diode) P-Ch - - -2.5 A
N-Ch - - 26
ISM Pulsed Source Current (Body Diode) C) P-Ch - - -21
. N-Ch - 0.72 1.0 v T: = 25°C, IS = 1.7A, Vss = 0v ©
VSD Diode Forward Voltage P-Ch - -0.78 -1.0 To = 25''C, Is = -2.9A, VGS = OV ©
. N-Ch - 52 77 N-Channel
trr Reverse Recovery Time P-Ch - 47 71 T J = 25''C, IF =1.7A, dildt = 100/Vps
N-Ch - 58 86 P-Channel
er Reverse Recovery Charge P-Ch - 49 73 nC T J = 25°C, IF = -2.9A, dildt = 100A/us
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
© N-Channel Iso S 4.1A, di/dt S 92A/ps, VDD S V(BR)DSS! Tu S 150°C
P-Channel [SD S -2.9A, di/dt f -77A/ps, VDD S V(BR)DSSI Tu S 150°C
6) N-Channel Starting To = 25°C, L = 12mH RG = 2552, IAS = 4.1A. (See Figure 12)
P-Channel Starting To = 25°C, L = 35mH Rs = 259, IAS = -2.9A.
© Pulse width 5 300ps; duty cycle 3 2%.
s Surface mounted on FR-4 board, ts 10sec.
