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IRF7316QTRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package
PD - 96126A
International
TOR Rectifier IRF73'16QPbF
. Advanced Process Technology HEXFET Power MOSFET
. Ultra Low On-Resistance E1 8m:
. Dual P- Channel MOSFET SI - DI -
. Surface Mount G1 BIZ l LCIE DI VDSS - -30V
. Available in Tape & Reel LLL''- Mu
q 150°C OperatingTemperature S2 l D2
q Lead-Free G2 D14 SEE D2 RDS(on) = 0.058n
Description Top View
These HEXFET8 Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-
resistance per silicon area. Additional features
ofthese H EXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These benefits combine to make this design an
extremely efficientand reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power SO-8
applications. This dual, surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos -30 V
Gate-Source Voltage VGS i 20
Continuous Drain Currents TA =25 C lr, -4.9
TA = 70''C -3.9 A
Pulsed Drain Current IBM -30
Continuous Source Current (Diode Conduction) ls -2.5
. . . . TA = 25°C 2.0
Maximum Power Dissipation (S) TA = 70°C PD 1.3 W
Single Pulse Avalanche Energy EAS 140 m]
Avalanche Current IAR -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt -5.0 V/ ns
Junction and Storage Temperature Range TJITSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient]) Ras 62.5 'CM/
1
08/02/10
IRF7316QPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vcs = 0V, In = -250pA
AV
RDs(on) Static Drain-to-Source On-Resistance - 0.042 0.058 Q VGS = -10V, ID = MSA ©
- 0.076 0.098 Ves = -4.5V, ID = -3.6A ©
Vesuh) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250PA
giis Forward Transconductance - 7.7 - S Vos = -15V, ID = -4.9A
loss Drain-to-Source Leakage Current - - -1.0 pA VDS I -24V, Vcs I 0V - o
- - -25 l/ns - -24V, Vcs - 0V, To - 55 C
less Gate-to-Source Forward Leakage - - 100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - -100 VGs = 20V
Qg Total Gate Charge - 23 34 ID = -4.9A
Qgs Gate-to-Source Charge - 3.8 5.7 no Vos = -15V
di Gate-to-Drain ("Miller") Charge - 5.9 8.9 Vss = -10V, See Fig. 10 ©
td(0n) Turn-On Delay Time - 13 19 VDD = -15V
tr Rise Time - 13 20 ns ID = -1.0A
tam) Turn-Off Delay Time - 34 51 Rs = 6.09
tr FallTime - 32 48 Ro = 159 (D
Ciss Input Capacitance - 710 - VGS = 0V
Coss Output Capacitance - 380 - pF hs = -25V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse a
(Body Diode) (D - - -30 p-n junction diode. s
l/sn Diode Forward Voltage - -0.78 -1.0 V Tu = 25''C, Is = -1.7A, Vcs = 0V ©
trr Reverse Recovery Time - 44 66 ns Tu = 25°C, h: = -1.7A
Qrr Reverse RecoveryCharge - 42 63 nC di/dt = 100A/ps ©
Notes:
C) Repet.itive .ratiryi pulse width limiled by (3 ISD f -2.8A, di/dt g 150A/ps, VDD g V(BR)DSS:
max. junction temperature. ( See fig. 11 ) Tus: 150°C
© Starting Tu-- 25°C, L = 35mH G) Pulse width f 300ps; duty cycle 3 2%.
Rs = 259, IAS-- -2.8A.
(9 Surface mounted on FR-4 board, ts: 10sec.
2
