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IRF7314QPBF
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International PD-96107A
TOR Rectifier RF7314QPbF
Benefits HEXFET6 Power MOSFET
0 Advanced Process Technology Voss RDS(on) max ID
. Dual P-Channel MOSFET -20V 0.058@VGs = -4.5V -5.2A
. Ultra Low On-Resistance 0.098@VGS = -2.7V -4.42A
. 175°C Operating Temperature
. Repetitive Avalanche Allowed up to Tjmax
o Lead-Free
Description 5113: 8-CIIn D1
These HEXFET © Power MOSFET's in a Dual SO-8 G1E£E2 7:11 D1
package utilize the lastest processing techniques to 3 6
achieve extremely low on-resistance per silicon area. S2 DIR CTE] D2
Additional features ofthese HEXFET Power MOSFET's G2 g]: 4 5:133 D2
are a 175°C junction operating temperature, fast SO-8
switching speed and improved repetitive avalanche Top View
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a
wide variety of applications.
The 175°C rating for the SO-8 package provides
improved thermal performance with increased safe
operating area and dual MOSFET die capability make
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vas © 10V -5.2
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V -4.3 A
IDM Pulsed Drain CurrentC) -43
Po @TA = 25°C Maximum Power Dissipation@ 2.4 W
PD @TA = 70°C Maximum Power Dissipation@ 1.7 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage t 12 V
EAS Single Pulse Avalanche Energy© 610 mJ
IAR Avalanche Current© -5.2 A
EAR Repetitive Avalanche Energy See Fig.14, 15, 16 mJ
To , TSTG Junction and Storage Temperature Range -55 to + 175 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient (3 62.5 °C/W
1
08/02/10
IRF7314QPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.009 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - O.049 O.058 Q VGS = -4.5V, ID = -5.2A ©
- 0.082 0.098 Ves = -2.7V, ID = -4.42A ©
VGS(th) Gate Threshold Voltage -0.7 - - V Vos = VGS, ID = -250PA
gfs Forward Transconductance 6.8 - - S Vos = 10V, ID = -5.2A
loss Drain-to-Source Leakage Current - - -1.0 pA l/rss = -16V, Vss = 0V
- - -25 Vros = -16V, l/ss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 19 29 ID = -5.2A
QgS Gate-to-Source Charge - 2.1 3.2 nC I/cs = -16V
di Gate-to-Drain ("Miller") Charge - 9.3 14 l/ss = -4.5V
tdmn) Turn-On Delay Time - 18 - VDD = -10V
t, Rise Time - 26 - ns ID = -1.0A
1d(off) Turn-Off Delay Time - 41 - Rs = 6.on
if Fall Time - 38 - Vas = -4.5V ©
Ciss Input Capacitance - 913 - Vas = 0V
Coss Output Capacitance - 512 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 260 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -3.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -43 p-n junction diode. s
VSD Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -3.0A, VGS = 0V ©
trr Reverse Recovery Time - 44 66 ns Tu = 25°C, IF = -3.0A
er Reverse Recovery Charge - 54 81 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Starting Tu = 25°C, L = 45mH
RG = 259, IAS = -5.2A.
(3 Surface mounted on FR-4 board, ts 10sec.
© Pulse width s: 300ps; duty cycle f 2%.
