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IRF7313Q-IRF7313QTRPBF
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
. Advanced Process Technology
q Ultra Low On-Resistance
. Dual N- Channel MOSFET
. Surface Mount
. Available in Tape & Reel
. 150°C OperatingTemperature
. Lead-Free
Description
These HEXFETQ Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additionalfeatures of these
HEXFET Power MOSFET's are a 150°Cjunction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mountSO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
PD - 96125A
IRF7313QPbF
HEXFET® Power MOSFET
(ll -,),l,-,1,- l ii: Voss = 30V
S2 mf- 53]: D2
6211‘ l 51D D2 Rros(on) = 0.029n
Top View
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos 30 V
Gate-Source Voltage VGS i 20
Continuous Drain Currents I: : 3:02 ID 2: A
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction) Is 2.5
. . . . TA = 25''C 2.0
Maximum Power Dissipation (S) TA = 70°C PD 1.3 W
Single Pulse Avalanche Energy © EAS 82 mJ
Avalanche Current IAR 4.0 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt 5.8 V/ ns
Junction and Storage Temperature Range TJITSTG -55 to + 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient© RQJA 62.5 "CIW
1
08/02/10
IRF7313QPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Veg = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.022 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.023 0.029 Q VGS = 10V, ID = 5.8A ©
- 0.032 0.046 Vss = 4.5V, ID = 4.7A (9
VGSM Gate Threshold Voltage 1.0 - - V VDs = Vcs, ID = 250pA
gfs Forward Transconductance - 14 - S Vos = 15V, ID = 5.8A
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vns i 24V, VGS i 0V _ a
- - 25 Vos - 24V, Vss - 0V, TJ - 55 C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
Qg Total Gate Charge - 22 33 ID = 5.8A
Qgs Gate-to-Source Charge - 2.6 3.9 nC Vos = 15V
di Gate-to-Drain ("Miller") Charge - 6.4 9.6 Vcs = 10V, See Fig. 10 G)
tam) Turn-On Delay Time - 8.1 12 VDD = 15V
tr Rise Time - 8.9 13 ns ID =1.0A
tam) Turn-Off Delay Time - 26 39 Rs = 6.09
tt Fall Time - 17 26 RD =15Q ©
Ciss Input Capacitance - 650 - Ves = 0V
Cass Output Capacitance - 320 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse 6
(Body Diode) (D - - 30 p-n junction diode. s
l/sn Diode Forward Voltage - 0.78 1.0 V Tu = 25°C, ls = 1.7A, VGS = 0V ©
trr Reverse Recovery Time - 45 68 ns Tu = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge - 58 87 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by (3 ISD s 4.0A, di/dt s 74A/ps, vDDg V(BR)DSS, T J f 150°C
max. junction temperature. ( See fig. 11 ) © Pulse width I 300ps; duty cycle f 2%.
© Starting Tu-- 25''C, L = 10mH (9 Surface mounted on FR-4 board, t s: 10sec.
Rs = 259, IAS; = 4.0A.
2
