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IRF7311TRPBF
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95180
International
Tart, Rectifier IlRF73r1PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance Sl il ._ MUD,
Dual N-Channel MOSFET 614g tif LAM. VDSS = 20V
Surface Mount
Fully Avalanche Rated
Lead-Free G CIE'
S JL"- JUDZ
(j):] 51w RDS(on)=O.029.Q
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
ieadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage Vos 20 V
Gate-Source Voltage V68 t 12
. . T = 25°C 6.6
Continuous Drain Currents T: = 70°C In 5.3 A
Pulsed Drain Current lose 26
Continuous Source Current (Diode Conduction) ls 2.5
T = (2 .
Maximum Power Dissipation S T: = 'er, Hg 'e W
Single Pulse Avalanche Energy Q) EAs 100 ml
Avalanche Current bu, 4.1 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt © dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ,TSTG ~55 to + 150 'C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient© RwA 62.5 oc/W
1
4/24/04
IRF7311PbF International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BH)DSS Drain-to-Source Breakdown Voltage 2O - - V Vas = 0V, b = 250pA
AWBmoss/ATJ Breakdown Voltage Temp. Coefficient - 0.027 - V/°C Reference to 25"C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0023 O.029 Q VGS = 4.5V, lo = 60A @
-- 0.030 0.046 l/ss = 2.7V, lo = 5.2A T
Vesuh) Gate Threshold Voltage 0.7 _ - V Vos = Vas, lo = 250PA
Ps Forward Transconductance - 20 - S Vos = lov, ID = 6.0A
loss Drain-to-Source Leakage Current - - 1.0 p A Vos = 16V, VGS = 0V
- - 5.0 Vos = 16V, Vss = OV, To = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
09 Total Gate Charge - 18 27 ID = 6.0A
Qgs Gate-to-Source Charge - 2.2 3.3 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 6.2 9.3 Vos = 4.5V, See Fig. 10 C)
td(on) Tum-On Delay Time - 8.1 12 V00 = 10V
tr Rise Time - 17 25 ns ID = 1.0A
tam") Turn-Off Delay Time - 38 57 Rs = 6.on
t. Fall Time - 31 47 RD = lon Cs)
Cas Input Capacitance - 900 - Vos = 0V
Coss Output Capacitance - 430 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current A integral reverse
(Body Diode) C) - - 26 p-n junction diode.
Vso Diode Forward Voltage - 0.72 1.0 V TJ = 25°C. Is = 1.7A, l/ss = 0V Cs)
trr Reverse Recovery Time - 52 77 ns To = 25°C, IF = 1.7A
Orr Reverse RecoveryCharge - 58 86 nC di/dt = 100A/ps CO
Notes:
C) Repetitive rating: pulse width limited by (3) lsr, g 4.1A, di/dt f 92A/ps, V00 ff. ViBmoss,
max. junction temperature. ( See fig. 11 ) Trs; 150°C
© Starting TJ = 25°C, L = 12mH CE) Pulse width s: 300ps; duty cycle f 2%.
Rs = 259, ‘As = 4.1A.
G) Surface mounted on 1 in square Cu board
2
