IRF730STRL ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF730STRR ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
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IRF730S-IRF730STRL-IRF730STRR
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Rectifier
PD-9.1009
lRF730S
HEXFETO Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
RDS(on) = 1.09
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
"CCI'::;]
SMD-220
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 5.5
ID @ To = 100°C Continuous Drain Current, Ves @ 10 V 3.5 A
IDM Pulsed Drain Current co 22
Po @ Tc = 25°C Power Dissipation 74 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 0.59 W/°C
Linear Derating Factor (PCB Mount)" 0.025
Ves date-to-Source Voltage 120 V
EAs Single Pulse Avalanche Energy © 290 md
IAR Avalanche Current C) 5.5 A
EAR Repetitive Avalanche Energy C) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
Tu, TSTG 'iJunction and Storage Temperature Range -55 to +150 °C
i Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Case - - 1 .7
Ram Junction-to-Ambient (PCB mount)" - - 40 °C/W
Flavx Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1RF730S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V VGs=OV, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.54 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.0 n VGs=1OV, ID=3.3A (d)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 25OWA
gts Forward Transconductance 2.9 - - S VDs=50V, lto=3.3A ©
loss Drain-to-Source Leakage Current - - 25 WA VDs=400V, VGS=OV
- - 250 VDs=32OV, Ves=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
% Total Gate Charge - - 38 kr--3.5A
Qgs Gate-to-Source Charge - - 5.7 nC VDs=320V
di Gate-to-Drain ("Miller") Charge - - 22 Ves=1OV See Fig. 6 and 13 ©
toon) Turn-On Delay Time - 1O - VDD=200V
t, Rise Time - 15 - ns 10:3.5A
td(oti) Turn-Off Delay Time - 38 - Re=12§2
If Fall Time - 14 -- RD=57Q See Figure 10 q)
Lo Internal Drain Inductance - 4.5 - tihtl,trion.iti1/).') _--.-,-,),
nH from package sic-i-li,)
Ls Internal Source Inductance - 7.5 - and center bf ,
die contact s
Ciss Input Capacitance - 700 - VGs=OV
Cass Output Capacitance - 170 - pF Vos--- 25V
Crss Reverse Transfer Capacitance - 64 - f=1.0MHz See Figure 5 J
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 5 5 MOSFET symbol D
(Body Diode) . A showing the b,-,,.
ISM Pulsed Source Current - - 22 integral rfaverge G :3.
(Body Diode) Ct) p-n junction diode. S
Vso Diode Forward Voltage - - 1.6 V TJ=25OC, Is=5.5A, Vss=OV ©
tn Reverse Recovery Time - 270 530 ns TJ=25°C, IF=3.5A
er Reverse Recovery Charge - 1.8 2.2 pC di/dt=100A/ws (g)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=16mH
Re=259, |As=5.5A (See Figure 12)
TJS150°C
© ISDSSSA, di/dts90A/ps, VDDSV(BR)Dss,
Ci) Pulse width s; 300 ps; duty cycle 32%.
