Home ›  I › I26 > IRF730A,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

IRF730A Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
IRF730A	STM	N/a	37	avai	400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

IRF730A ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91902ASMPS MOSFETIRF730A®HEXFET Power MOSFET
IRF730ALPBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD-93772ASMPS MOSFETIRF730AS/L®HEXFET Power MOSFET
IRF730AS ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400 ..
IRF730ASPBF ,400V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV Rds(on) max IDSS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400 ..
IRF730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRF730PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.308K IRF730 Intematiqhal TOR Rectifier HEXFETO Power MOSFET . Dynamic dv/dt Ratin ..
ISD2532S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2540S , SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 32-, 40-, 48-, AND 64-SECOND DURATION
ISD2560G , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560GI , Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations
ISD2560S , Single-Chip Voice Record/Playback Devices 32-, 40-, 48-, 64-,60-,75,90-, and 120-Second Durations

---

IRF730A
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
1
IRF730A
SMPS MOSFET
HEXFET® Power MOSFETSwitch Mode Power Supply (SMPS)Uninterruptable Power SupplyHigh speed power switching
Benefits
ApplicationsLow Gate Charge Qg results in Simple
Drive RequirementImproved Gate, Avalanche and dynamic
dv/dt RuggednessFully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum RatingsEffective Coss Specified (See AN1001)
PD - 91902A
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).
IRF730A
Static @ TJ = 25°C (unless otherwise specified)
Dynamic @ TJ = 25°C (unless otherwise specified)
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
IRF730A
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF730A
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward VoltageDS, Drain-to-Source Voltage (V)
C, Capacitance(pF)
IRF730A
5
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature-VDD
VDS
90%
10%
VGS
td(on)trtd(off)tf
IRF730A
D.U.T.VDSIG
3mA
VGS12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
IASVDSVDD
15V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche CurrentAV , Avalanche Current ( A)
DSav
, Avalanche Voltage ( V )

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED