IRF7309TRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageInternational
TOR Rectifier"PERF ETe Power MOSFET
o GenerationVTechnology
0 Ultra LowOn-Resi ..
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IRF7309TRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
PD - 95014A
International
Tart, Reciiiier IRF7309PbF
HEXFET® Power MOSFET
o GenerationVTechnology
. Ultra LowOn-Resistance N-CHANNELMOSFET
1 N-Ch P-Ch
. Dual N and P Channel Mosfet S1'I_ a 81”"
q Surface Mount 9113: 711301 v 30V 30V
. . DSS -
o /Yailab.le In Tape , Reel S2 mf- BI, D2
. Dynamic dv/dtRating 4 5
. . G2 [I III! D2
q fasdt :WltChlng P-CHANNELMOSFET RDS(on) 0.0500 0.100
q ea - ree
Top View
Description
Fifth Generation HEXFEl's from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. 1/Mth these improvements, multiple devices can be used in an SO-8
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
ID tp TA = 25°C 10 Sec. Pulse Drain Current, Veg @ 10V 4.7 -3.5 A
ID © TA = 25°C Continuous Drain Current, Veg © 10V 4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, Veg @ 10V 3.2 -2.4 A
IDM Pulsed Drain Current C) 16 -12 A
PD CIT,; = 25°C Power Dissipation (PCB Mount)" 1.4 W
Linear Derating Factor (PCB Mount)" 0.011 Wf'C
Vos Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery dv/dt © 6.9 l -6.0 V/ns
Trrsrs Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Min. Typ. Max. Units
RQJA Junction-tty-Ar) (PCB Mount, steady state)" - - 90 ''CAN
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1
04/06/07
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IRF7309PbF International
TOR Rectifier
Electrical Characteristics @ 1:, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. - _ N-Ch 30 - - Vss = 0V, ID: 250PA
V(BR)DSS Drain to Source Breakdown Voltage P-Ch -30 - - V Ws = 0V, b = -250pA
. N-Ch - 0.032 - Reference to 25°C b = 1mA
AV 'AT B kd V It T . C ffi t ,
(BRVss/ J rea own t) age emp oe me" P-Ch - 0.037 - vrc Reference to 25°C, b = -1mA
N Ch - - 0.050 V55 =1OV, ID = 2.4A ©
. . _ _ _ . - - - 0.080 Vss = 4.5V, b = 2.0A a
RDsz) Static Drain to Source On Resistance P-Ch - - 0.10 n Ws = -10V, ID = -1.8A ©
- - 0.16 V05 = -4.5V, ID = -1.5A 0
N-Ch 1.0 - - I/cs = Vss, ID = 250pA
VGS(th) Gate Threshold Voltage P-Ch .1 .0 - - V Ws = Vss, ID = -250PA
N-Ch 5.2 - - VDs = 15V, ID = 2.4A 0
gts Forward Transconductance P-Ch 2.5 - - S Ws = -24V, ID = -1.8A GD
N-Ch - - 1.0 Ws = 24V, Ws = 0V
. _ - P-Ch - - -1.0 I/ce = -24V, Vos = 0V
bss Drain to Source Leakage Current N-Ch - - 25 PA VDS = 24V, Var, = 0V, T.) = 125°C
P-Ch - - -25 Ws = -24V, Ws = 0V, TJ = 125°C
loss Gate-to-Source Forward Leakage N-P - - i100 nA Vos = A 20V
% Total Gate Charge :2: I I ii', N-Channel
N-Ch - - 2 9 ID = 2.6A, VDS = 16V, Mr; = 4.5V
Qgs Gate-to-Source Charge . nC ©
P-Ch - - 2.9
. . N-Ch - - 7 9 P-Channel
' Gate.ta-Drain ("Miller") Charge P Ch iG ID = -2.2A, VDs = -16V, Vos = -4.5V
tdmn) Turn-On Delay Time 'fdl,I - 61‘18 - N-Channel
. . N-Ch - 21 - VDD = 10V, b = 2.6A, Rs = 6.f10,
t, Risefime P-Ch - 17 - RD = 339
. N-Ch - 22 - ns ©
tnmff) Turn-Off Delay Time P-Ch - 25 - P-Channel
N-Ch - 7 7 - VDD = -10V, b = -2.2A, Rs = 6.052,
ll Ti . =
tf Fa Ime P-Ch - 18 - RD 4.50
LD Internal Drain Inductace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
. N-Ch - 520 -
Css Input Capacitance P Ch 440 N-Channel
Lil,' - 180 - Vas = 0v, vDS = 15V, f =1.0MHa
CUSS Output Capacitance . - - pF 0
P-Ch - 200 -
N Ch 72 P-Channel
Crss Reverse Transfer Capacitance P:Ch I 93 I Vss = 0V, Vros = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. V N-Ch - - 1.8
Is Continuous Source Current (Body Diode) P-Ch - - -1.8 A
N-Ch - - 16
ISM Pulsed Source Current (Body Diode)© P-Ch - - -12
. N-Ch - - 1.0 TJ = 25°C ls =1.8A Ws = 0V CD
VSD Diode FDrward Vtoltage P-Ch - - -1.0 TJ = 25°C ls = -1.8A, Ws = OV c:
R R Ti N-Ch - 47 71 ns N-Channel
tr, ever“ emery Ime P-Ch - 53 80 T J = 25°C, IF = 2.6A, di/dt = 100A/ps
N-Ch - 56 84 nC P-Channel
er Reverse Recovery Charge P-Ch - 66 99 Tu = 25°C, IF = -2.2A, dildt = 100Afps
tun Forward Turn-On Time N-P Intrinsic turn-on ime is neglegible (turn-on is dominated by 15+LD)
O Repetitive rating: pulse width limited by max. junction temperature. ( See fig. 23 )
(D N-Channel ISO s; 2.4A, di/dt s; 73A/ps, V00 s; V(BRDSS, Tu s; 150°C
P-Channel ISD f -1.8A, di/dt I BONUS. VDD I N/esvss, TJ I 150°C
(3) Pulse width I 300ps: duty cycle 5 2%.
2
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