IRF7307TRPBF ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7309 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1243BIRF7309PRELIMINARY®HEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low ..
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IRF7307TRPBF
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International PD-95179
IEZR Rectifier IRF7307PbF
Generation VTechnology HEXFET Power MOSFET
Ultra Low On-Resistance
Dual N and P Channel Mosfet SI v/l-""'"-)'-''], DI N-Ch P-Ch
Surface Mount
Available in Tape & Reel 3 6
Dynamic dv/dt Rating S2 IIE"- I D2 VDSS 20V -20V
Fast Switching G2 TTLHANNELMOSFQT D2
Lead-Free Top View RDS(0n) 0.0509 00909
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
(31:13:2 l 71:01
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, orwave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Max. _
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGs @ 4.5V 5.7 -4.7
ID © TA = 25°C Continuous Drain Current, Vss @ 4.5V 5.2 -4.3 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 4.5V 4.1 -3.4
IDM Pulsed Drain Current (D 21 -17
Pro @TA = 25''C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Vss Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt co 5.0 -5.0 V/ns
TU,TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RUJA Maximum Junction-to-Ambient - 62.5 'CIW
10/7/04
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IRF7307PbF
International
TOR Rectifier
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage :2: il I I V x: : tj: :3: fggijA
. . N-Ch - 0.044 - Reference to 25''C lo = 1mA
AV AT Breakdown Volta e Tem . Coefficient 7 '
(BR’DSS/ J g p P-Ch - -o.o12 - V/ C Reference to 25°C, ID = -1mA
N-Ch - - 0050 VCs = 4.5V, ID = 2.6A (3)
. . - - - . - - 0.070 VGS = 2.7V, ID = 2.2A L)
RDs(oN) Static Drain to Source On Resistance P-Ch - - 0.090 Q VGS = -4.5V, ID = -2.2A 3
- - 0.140 VGs=-2.7V, ko=-1.8A3
N-Ch 0.70 - - VDs = VGs, ID = 250PA
V G t Th h Id V It
GS(th) a e res o o age P-Ch -o.7o - - V l/cos = Vcs, ID = -250pA
N-Ch 8.30 - - Vos=15V,lo=2.6A(3)
gts Forward Transconductance P-Ch 4.00 - - s Vos = -15V, ID = -2.2A (3)
N-Ch - - 1.0 VDs = 16V, VGS = 0V
loss Drain-to-Source Leakage Current P-Ch - - -1.0 HA Vos = -16V, VGS = ov,
N-Ch - - 25 Vos = 16V, VCs = ov, T: = 125°C
P-Ch - - -25 V93 = -16V, Vas = OV, Ts = 125°C
lass Gate-to-Source Forward Leakage N-P - - i100 Vas = 1 12V
% Total Gate Charge 'tgh, - - , N-Channel
N Ch - - 2.2 lro=2.6A,Vros=16V,Vcs=4.5V
Qgs Gate-to-Source Charge P-Ch - - -3.-3 nC (3)
. . N:Ch I I 8.0 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - - sir, ID = -2.2A, Vros = -16V, Vss = M.5V
tdmn) Turn-On Delay Time Ili', I 'ld I N-Channel
. . N-Ch - 4'2 - vDD = 10v, ID = 2.6A, Rs = 6.09,
tr Rise Time P-Ch - 26 - RD = 3.8f2
{d(om Turn-Off Delay Time ig: I g I P-Channel
. N-Ch - 51 - VDD = -10V, ID = -2.2A, Rs = 6.09,
t, Fall Time P-Ch - 33 - RD = 459
u, Internal Drain Induclace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
Ciss Input Capacitance 'tgh, - 26153 - N-Channel
Lic),' - 280 - Vcs = 0V, l/cos = 15V, f = 1.0MHz
Goss Output Capacitance P-Ch - 310 - pF 8)
N-Ch - 140 - P-Channel
Crss Reverse Transfer Capacitance P:Ch I 170 I VGS = 0V, Vos = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
. . N-Ch - - 2.5
Is Continuous Source Current (Body Diode) P-Ch - - -2.5 A
N-Ch - - 21
Iss, Pulsed Source Current (Body Diode) (D P-Ch - - -17
. N-Ch - - 1.0 v To-- 25''C,ls=1.8A,Vcs=0V3
VSD Diode Forward Voltage P-Ch - - 40 To = 25°C, ls = -1.8A, VGS = 0V (3)
. N-Ch - 29 44 N-Channel
trr Reverse Recovery Time P-Ch - 56 84 T J = 25''C, IF = 2.6A, di/dt = 1OOA/ps
N-Ch - 22 33 P-Channel CD
On Reverse Recovery Charge P-Ch - 71 110 nC T J = 25°C, IF = -2.2A, di/dt = 100A/ps
ton Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
© N-Channel ' S 2.6A, di/dtS100A/ps, VDD S V(BR)DSS’ Tu S 150°C
© Pulse width 3 300ps; duty cycle I 2%.
P-Channel ISD S -2.2A, di/dt S 50/Ups, VDD S V(BR)DSS, Tu S 150°C
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B) Surface mounted on FR-4 board, ts 10sec.
