IRF7307QTRPBF ,20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7307QTRPBF ,20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7307TR ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1242BIRF7307®HEXFET Power MOSFETl Generation V TechnologyN -C HAN NEL M O SF ET1 8l Ultra Lo ..
IRF7307TRPBF ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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IRF7307QTRPBF
20V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
International
TOR Rectifier
IRF7307QPbF
. Advanced Process Technology
. Ultra LowOn-Resistance
. Dual N and P Channel MOSFET
. Surface Mount
. Available in Tape & Reel
. 150°C Operating Temperature
. Lead-Free
Description
These HEXFET© Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremelylow on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combineto
make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package providesenhancedthermal
characteristics and dual MOSFET die capability
making it ideal in a variety of power applications. This
dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
HEXFET© Power MOSFET
N-CHANNEL MOSFET
Sli- Yrln D1 N-Ch P-Ch
G1 33:2 l 7CD] D1
S2 nes- l SEED D2 VDSS 20V -20V
G2 Tr‘ s-TT) D2
P-CHANNEL MOSFET
Top View RDS(on) 0.0509 0.0909
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Base Part Number Package Type Standard Pack . Orderable Part Number EOL Notice
Form Quantity
IfF7ayA2PbF 89-8 Tube/Bulk 95 IfRF7307GfMF EOL 529
IRF7307CPbF 808 Tape and Reel 4000 |RF7307QTRPbF
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, Vss © 4.5V 5.7 -4.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2 -4.3 A
In @ TA = 70''C Continuous Drain Current, l/ss @ 4.5V 4.1 -3.4
IDM Pulsed Drain Current CD 21 -17
PD@TA = 25''C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage , 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 -5.0 V/ns
TU,TSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient) - 62.5 oc/W
© 2014 International Rectifier Submit Datasheet Feedback September 3, 2014
|RF73 7QPbF
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. - _ N-Ch 20 - - VGS = 0v, ID = 250PA
V(BR)ross Drain to Source Breakdown Voltage P-Ch -20 - - V VGS = 0V, lo = -2500A
. . N-Ch - 0.044 - Reference to 25''C I = 1mA
AV AT B kdownVolt T .C ff nt tk ‘D
‘BRDSSI J rea 0 n 0 age em oe ICle P-Ch - 0012 - V/ C Reference to 25°C, ID = -1mA
N-Ch - - 0.050 Vcs = 4.5V, ID = 2.6A ©
RDS(ON) Static Drain-to-Source On-Resistance P-Ch I I 8338 n ti: : jiri/ici/ict-i,',
- - 0.140 Vcs=-2.7V, ko---1.8A3
VGS(th) Gate Threshold Voltage N-Ch 0.70 - - V Vos = Was, lo = 250PA
P-Ch -o.70 - - Vos = Vas, ID = -250PA
N-Ch 8.30 - - Vros=15V,lcr=2.6A3)
gts Forward Transconductance P-Ch 4.00 - - s VDs = -15V, ID = -2.2A (3)
N-Ch - - 1.0 Vos = 16V, Vrss = 0V
. - - P-Ch - - -1.0 Vos = -16V, VGs = 0V,
loss Drain to Source Leakage Current N-Ch - - 25 PA Vos = 16V, VGS = 0V, To = 125°C
P-Ch - - -25 Vos = -16V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage N-P - - +100 VGS = _+ 12V
% Total Gate Charge :2: I I , N-Channel
N Ch 2.2 lro=2.6A,Vros=16V,Vcs=4dN
Q s Gate-lo-SourceCharge - - - . nC LD
g P-Ch - - 3.3 P-Channel
di Gate-to-Drain ("Miller") Charge SE: I I 'lf lo = -2.2A, Vos = -16V, VGS = -4.5V
. N-Ch - 9.0 -
tdmn) Turn-On Delay Time P-Ch - 8 4 - N-Channel
. . N-Ch - 4'2 - VDD = 10V, ID = 2.6A, Rs = 6.00,
tr Rise Time P-Ch - 26 - RD = 3.39
. N-Ch - 32 - ns (3)
td(off) Turn-Off Delay Time P-Ch - 51 - P-Channel
. N-Ch - 51 - VDD = -10v, lo = -2.2A, Rs = 6.on,
tr Fall Time P-Ch - 33 - RD = 459
Lo Internal Drain lnductace N-P - 4.0 - H Between lead tip
Ls Internal Source Inductance N-P - 6.0 - n and center of die contact
Ciss InputCapacitance SE: - th - N-Channel
Li;),' - 280 - VGS = 0V, Vos =15V,f = 1.0MHZ
Cass OutputCapacitance - - - F ('3
5‘3: - i113 - P-Channel
Crss Reverse Transfer Capacitance P:Ch I 170 I Vcs = 0V, Vos = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
N-Ch - - 2.5
Is Continuous Source Current (Body Diode) P-Ch - - -2.5 A
N-Ch - - 21
ISM Pulsed Source Current (Body Diode) co P-Ch - - -17
. N-Ch - - 1.0 V To = 25°C, ls = 1.8A, Vas = 0V CD
VSD Diode Forward Voltage P-Ch - - 40 T: = 25°C, ls = -1.8A, VGS = 0V '3)
. N-Ch - 29 44 N-Channel
trr Reverse Recovery Time P-Ch - 56 84 T, = 25°C, IF = 2.6A, di/dt = 100A/ps
N-Ch - 22 33 P-Channel C)
tar, Reverse Recovery Charge P-Ch - 71 110 n T J = 25°C, IF = -2.2A, di/dt = 100A/ps
ton Fon/vard Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23)
© N-Channel ISDS 2.6A, di/dt S 100A/ps, VDD S V(BR)ross,Tr-c150''C
P-Channel ISDS -2.2A, di/dt S 50A/ps, VDD f V(BR)DSS: Tu f 150°C
© Pulse width S 300psi duty cycle S 2%.
© Surface mounted on FR-4 board, ts 10sec.
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