IRF7306TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
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IRF7306TRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRRectifier
PD - 95178
IRF7306PbF
q Generation VTechnology HEXFET© Power MOSFET
o Ultra Low On-Resistance
0 Dual P-Channel Mosfet 1 a
q Surface Mount S1m2 ',-'r1,l" D1 VDss = -30V
0 Available in Tape & Reel G1 W W D1
0 Dynamic dv/dt Rating S2 EL 653: D2
0 Fast Switching GZEE 4 7 5m: D2 RDS(0n) = 0.109
. Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The 80-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, orwave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA-- 25°C 10 Sec. Pulsed Drain Current, N/cs @ -10V -4.0
ID @ TA = 25''C Continuous Drain Current, VGs @ -10V -3.6
ID @ TA = 70°C Continuous Drain Current, VGS © -10V -2.9 A
IDM Pulsed Drain Current (D -14
PD@TA = 25''C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGs Gate-to-Source Voltage t20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu,Tsrs Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient) - 62.5 "CM/
10/7/04
Downloaded from: http://www.datasheetcata|o_q.com/
IRF7306PbF
International
TOR iikyctifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage -30 - - V Vcs = 0V, ID = -250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - -0.037 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.10 Q Vcs = -10V, ID = -1.8A ©
- - 0.16 Veg = -4.5V, ID = -1.5A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
9tis Forward Transconductance 2.5 - - S Vos = -24V, ID = -1.8A
. - - -1.0 VDS = -24V, VGS = 0V
I Drain-to-Source Leaka e Current A
DSS g - - -25 p l/ns; = -24V, Vcs = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Veg = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - - 25 ID = -1.8A
Qgs Gate-to-Source Charge - - 2.9 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - - 9.0 Vss = -10V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 11 - VDD = -15V
tr Rise Time - 17 - ns ID = -1.8A
td(off) Turn-Off Delay Time - 25 - RC; = 6.09
tt FaIITime - 18 - RD = 8.29, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - . _
nH Between lead tip l
and center of die contact G /
Ls Internal Source Inductance - 6.0 -
Ciss Input Capacitance - 440 - Vcs = 0V
Cass Output Capacitance - 200 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 93 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFETsymboI D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -14 p-n junction diode. s
VSD Diode Forward Voltage - - -1.0 V Tu = 25''C, Is = -1.8A, VGS = 0V ©
trr Reverse Recovery Time - 53 80 ns Tu = 25°C, IF = -1.8A
Qrr Reverse RecoveryCharge - 66 99 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Iso f -1.8A, di/dt S 90/Ups, VDD S V(BR)oss,
TJg150°C
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© Pulse width S 300ps; duty cycle 3 2%.
Surface mounted on FR-4 board, t S 10sec.
