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IRF7304QTRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
PD - 96104A
International
TOR Rectifier IRF7304QPbF
HEXFET© Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance 1 B-
. Dual PChanneI MOSFET 81m} l m DI VDss = -20V
. Surface Mount G1 2 LITE] DI
. Available in Tape & Reel 3_ s
. 150°C OperatingTemperature S2 CTL] l E D2
. Lead-Free G2 4 5311 D2 RDS(on) = 0.0909
Description Top View
These HEXFETO Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniquesto achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFETs are a 150°C junction
operatingtemperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications. SO-8
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -4.7
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain Current co -17
PD@TA=25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
V95 Gate-to-Source Voltage 112 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJITSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RNA Maximum Junction-to-Ambient) - 62.5 "CM/
1
08/02/10
IRF7304QPbF
International
1:212 Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vcs = 0V, ID = -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - -0.012 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance : :: 32:3 n V: : Ci') l: : h',t ,
VGS(th) Gate Threshold Voltage -0.70 - - V VDS = VGS, ID = -250pA
gfs Forward Transconductance 4.0 - - S l/ns = -16V, ID = -2.2A
. - - -1.0 N/ns = -16V, N/cs = 0V
bss Drain-to-Source Leakage Current - - -25 pA VDs = -16V, Ves = 0V, TJ = 125°C
l Gate-to-Source Forward Leakage - - -100 nA Veg = -12V
GSS Gate-to-Source Reverse Leakage - - 100 Vss = 12V
tk Total Gate Charge - - 22 ID = -2.2A
Qgs Gate-to-Source Charge - - 3.3 nC VDs = -16V
di Gate-to-Drain ("Miller") Charge - - 9.0 Vcs = -4.5V, See Fig. 6 and 12 ©
tam) Turn-On Delay Time - 8.4 - VDD = -10V
tr Rise Time - 26 - ns ID = -2.2A
td(off) Turn-Off Delay Time - 51 - Rs = 6.09
tf FaIITime - 33 - Ro = 4.59, See Fig. 10 ©
L Internal Drain Inductance - 4.0 -
D nH Between lead tip (lr" "
and center of die contact GSL /
LS Internal Source Inductance - 6.0 - __
Ciss Input Capacitance - 610 - Ves = 0V
Coss Output Capacitance - 310 - pF VDs = -15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFETsymbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current integral reverse a
(Body Diode) OD - - M7 p-n junction diode. s
l/sn Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -1.8A, N/cs = 0V ©
trr Reverse Recovery Time - 56 84 ns Tu = 25°C, IF = -2.2A
Q,, Reverse RecoveryCharge - 71 110 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
oo Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISD f -2.2A, di/dt C- 50A/ps, VDD f V(BR)ross,
Tu LC 150°C
CO Pulse width S 300psi duty cycle S 2%.
