IRF7303QTRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagefeatures ofthese HEXFET Power MOSFET's are a 150°C junctionoperating temperature, fast switching ..
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IRF7303QTRPBF
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
PD - 96103A
IRF7303QPbF
HEXFET© Power MOSFET
q Advanced Process Technology
. Ultra Low On-Resistance SI [_U_1- 8 4H D1 -
. Dual NChannel MOSFET G1 D12 I 733: DI VDSS - 30V
q Surface Mount
. Available in Tape & Reel S2 mf- SID D2
. 150°C OperatingTemperature G2 11:“ 53:: D2 RDS(on) = 00509
. Lead-Free
Top View
Description
These HEXFETO Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it SO-8
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, Vss @ 10V 5.3
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 4.9 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 3.9
Ls, Pulsed Drain Current (D 20
Pro @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Vss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu,TsrrG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient@ - 62.5 °CNV
1
08/02/10
IRF7303QPbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vcs = 0V, ID = 250pA
AV
RDS(0N) Static Drain-to-Source On-Resistance - - Ch050 Q l/cs = lov, ID = 2.4A ©
- - 0.080 VGs = 4.5V, ID = 2.0A ©
Vesah) Gate Threshold Voltage 1 .0 - - V Vros = VGs, ID = 250pA
git Forward Transconductance 5.2 - - S Vros = 15V, ID = 2.4A
loss Drain-to-Source Leakage Current : : 1250 PA x3: =" :2; J::=_:\\/l Tu = 125 "C
ds Gate-to-Source Forward Leakage - - 100 nA Vcs = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = - 20V
% Total Gate Charge - - 25 ID = 2.4A
Qgs Gate-to-Source Charge - - 2.9 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - - 7.9 Vss = 10V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 6.8 - VDD = 15V
tr Rise Time - 21 - ns ID = 2.4A
tam) Turn-Off Delay Time - 22 - RG = 6.09
tf FaIITime - 7.7 - RD = 6.29, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - _ D
nH Between lead tip E )
and center of die contact G
Ls Internal Source Inductance - 6.0 - 7’s
Ciss Input Capacitance - 520 - Vcs = 0V
CosS Output Capacitance - 180 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymboI D
(Body Diode) - - 2.5 showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 20 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, Is = 1.8A, Vss = 0V ©
trr Reverse Recovery Time - 47 71 ns Tu = 25''C, IF = 2.4A
Qrr Reverse RecoveryCharge - 56 84 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) ISD S 2.4A, di/dt S 73/Ups, VDD S V(BR)DSS;
Tu S 150''C
© Pulse width S 300psi duty cycle f 2%.
(9 Surface mounted on FR-4 board, ts 10sec.
