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IRF7303-IRF7303TR
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR, Rectifier
PD - 9.1239D
IRF7303
HEXFET© Power MOSFET
o Generation V Technology
o Ultra Low On-Resistance Sl use a_LL DI
V = 30V
o Dual N-Channel Mosfet G1 W2 I 7TD1 DSS
o Surface Mount ILL ML
o Available in Tape & Reel S2 D2
o Dynamic dv/dt Rating G2 I ll 5 ll D2 RDS(on) = 0.0509
o Fast Switching .
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ L-- 25°C 10 Sec. Pulsed Drain Current, VGs @ 10V 5.3
ID @ TA: 25°C Continuous Drain Current, l/ss @ 10V 4.9
In @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9 A
IDM Pulsed Drain Current C) 20
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TU,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient) - 62.5 °CNV
8/25/97
IRF7303 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250pA
AVGSMDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.050 Q VGS = 10V, ID = 2.4A ©
- - 0.080 VGS = 4.5V, ID = 2.0A ©
VGS(th) Gate Threshold Voltage 1.0 - - V VDs = VGs, ID = 250pA
gfs Forward Transconductance 5.2 - - S VDs = 15V, ID = 2.4A
I Drain-to-Source Leaka e Current - - 1.0 PA I/ras = 24V, I/ss = 0V
DSS g - - 25 VDS = 24V, VGS = 0v, Tu = 125 ''C
less Gate-to-Source Forward Leakage - - 100 nA l/cs = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = - 20V
% Total Gate Charge - - 25 ID = 2.4A
Qgs Gate-to-Source Charge - - 2.9 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 7.9 I/ss = 10V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 6.8 - VDD = 15V
tr RiseTime - 21 - ns ID = 2.4A
td(off) Turn-Off Delay Time - 22 - Rs = 6.09
tf FallTime - 7.7 - RD = 6.29, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - . D
nH Between lead tip Q: )
and center of die contact G
LS Internal Source Inductance - 6.0 - S
Ciss Input Capacitance - 520 - I/ss = 0V
Coss Output Capacitance - 180 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 5 MOSFET symbol D
(Body Diode) . A showing the Hi:
ISM Pulsed Source Current integral reverse G E
(Body Diode) co - - 20 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, Is = 1.8A, VGS = 0V ©
trr Reverse Recovery Time - 47 71 ns Tu = 25°C, IF = 2.4A
er Reverse RecoveryCharge - 56 84 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by C3) Pulse width 5 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© ISD f 2.4A, di/dt S 73A/ps, V00 s: V(BR)DSS, © Surface mounted on FR-4 board, t S 10sec.
TJ f 150°C
