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IRF7301-IRF7301TR
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-9.1238C
TOR, Rectifier IRF730'l
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance Sl H17 5 ll lol
Dual N-Channel Mosfet l
Surface Mount G1
Available in Tape & Reel S _UJ3_ 64L] D2
Dynamic dv/dt Rating
Fast Switching
G2 EL’ - 5:113D2 RDS(on) = 0.0509
Top View
Description
Fifth Generation HEXFETs from International Rectiferutilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in 80-8
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, Ves @ 4.5V 5.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1 A
IDM Pulsed Drain Current C) 21
Po @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 Wl°C
VGs Gate-to-Source Voltage i 12 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient) - 62.5 ''C/W
8/25/97
IRF7301
International
TOR 'k)ctifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250PA
Av(,3R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.044 - V/°C Reference to 25°C, ID = 1mA
. . . - - 0.050 VGS = 4.5V, ID = 2.6A ©
R D - -R Q
DS(ON) Static rain-to-Source On esistance _ - 0.070 VGS = 2.7V, ID = 2. 2A ©
VGS(th) Gate Threshold Voltage 0.70 - - V VDs = VGs, ID = 250PA
gfs Forward Transconductance 8.3 - - S Vros = 15V, ID = 2.6A
. - - 1.0 Vros = 16V, VGS = 0V
loss Drain to Source Leakage Current - - 25 p Vos = 16V, VGS = 0V, TJ = 125 c C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = - 12V
09 Total Gate Charge - - 20 ID = 2.6A
Qgs Gate-to-Source Charge - - 2.2 no Vros = 16V
di Gate-to-Drain ("Miller") Charge - - 8.0 l/ss = 4.5V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 9.0 - VDD = 10V
tr Rise Time - 42 - ns ID = 2.6A
trust) Turn-Off Delay Time - 32 - Rs = 6.09
tf Fall Time - 51 - RD = 3.89, See Fig. 10 ©
k Internal Drain Inductance - 4.0 - . D
nH Between lead tip E )
d t fdi t t G
Ls Internal Source Inductance - 6.0 - an cen er 0 le con ac
Ciss Input Capacitance - 660 - VGs = 0V
Coss Output Capacitance - 280 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 21 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V T: = 25°C, Is = 1.8A, VGS = 0V ©
trr Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = 2.6A
Qrr Reverse RecoveryCharge - 22 33 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Iso S 2.6A, di/dt S 100A/ps, VDD S V(BR)DSSy
TJs150°c
© Pulse width 3 300ps; duty cycles 2%.
GD Surface mounted on FR-4 board, t s 10sec.
