IRF730 ,5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFETIRF730N-CHANNEL 400V - 0.75Ω - 5.5A TO-220PowerMESH™II MOSFETTYPE V R IDSS DS(on) DIRF730 400 V < 1 ..
IRF7301 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1238CIRF7301®HEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance18S1 D1l D ..
IRF7301PBF , HEXFET Power MOSFET
IRF7301TR ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1238CIRF7301®HEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance18S1 D1l D ..
IRF7303 ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1239DIRF7303®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7303QTRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagefeatures ofthese HEXFET Power MOSFET's are a 150°C junctionoperating temperature, fast switching ..
ISC5804AT2 , Transistor
ISD1020AP , Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
ISD1110P , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1110S , SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
ISD1210S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
ISD1212S , Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations
IRF730
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
1/8March 2001
IRF730N-CHANNEL 400V - 0.75Ω - 5.5A TO-220
PowerMESH™II MOSFET
(1)ISD ≤5.5A, di/dt ≤90A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE
DESCRIPTIONThe PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
IRF730
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
IRF730
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
IRF730
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/8
IRF730
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
IRF730
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
